Zetex Semiconductor MPS5179 Datasheet
NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 2 FEB 1994
FEATURES
* HIGH f
* MAX CAPACITANCE=1pF
* LOW NOISE 5dB
APPLICATIONS
* CORDLESS TELEPHONES
* KEYLESS ENTRY SYSTEMS
* WIDEBAND INSTRUMENTATION AMPLIFIERS
* TELEMETRY
* WIRELESS LANS
* REMOTE METERING
* TAGGING
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
=900MHz MIN
T
CBO
CEO
EBO
C
tot
j:Tstg
MPS5179
C
B
E
E-Line
TO92 Compatible
20 V
12 V
2.5 V
50 mA
500 mW
-55 to +200 °C
Note: Spice model available
PAGE NO
MPS5179
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Collector-Base
Capacitance
Small Signal
Current Gain
Collector Base
Time Constant
Noise Figure NF 5 dB I
Common-Emitter
Amplifier Power Gain
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
T
C
cb
h
fe
rbC
20 V
12 V IC= 3mA, IB=0
2.5 V
0.02
1.0
µA
µA
0.4 V IC=10mA, IB=1mA
1.0 V IC=10mA, IB=1mA
25 250 IC=3mA, VCE=1V
900 2000 MHz IC=5mA, VCE=6V,
1.0 pF IE=0, VCB=10V, f=1MHz
25 300 IC=2mA, VCE=6V, f=1KHz
3.0 14 ps IE=2mA, VCE=6V,
c
Gpe 15 dB I
= 1µA, I
I
C
=10µA, I
I
E
V
CB
V
CB
T
amb
=0
E
C
=15V, IE=0
=15V, IE=0,
=150°C
f=100MHz
f=31.9MHz
=1.5mA, VCE=6V
C
=50Ω, f=200MHz
R
S
=5mA, VCE=6V
C
f=200MHz
=0
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