Zetex Semiconductor FZTA92 Datasheet
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 JANUARY 1996 ✪
FEATURES
* High breakdown voltage
APPLICATIONS
* Suitable for video output stages in TV sets
and switch mode power supplies
COMPLIMENTARY TYPE FZTA42
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Base Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
obo
* Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMTA92 datasheet.
-300 V
-300 V IC=-1mA, IB=0*
-5 V
25
40
25
50 MHz IC=-10mA, VCE=-20V
CBO
CEO
EBO
B
C
tot
j:Tstg
= 25°C).
amb
-0.25
-0.1
-0.5 V IC=-20mA, IB=-2mA
-0.9 V IC=-20mA, IB=-2mA
6pFVCB=-20V, f=1MHz
µs. Duty cycle ≤ 2%
µA
µA
FZTA92
C
B
-300 V
-300 V
-5 V
-100 mA
-500 mA
2W
-55 to +150 °C
=-100µA, I
I
C
=-100µA, I
I
E
V
=-200V, IE=0
CB
V
=-3V, IC=0
EB
I
=-1mA, VCE=-10V*
C
=-10mA, VCE=-10V*
I
C
I
=-30mA, VCE=-10V*
C
f=20MHz
=0
E
=0
C
E
C
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