Zetex Semiconductor FZT958 Datasheet
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES - FZT957 - FZT857
FZT958 - N/A
PARTMARKING DETAILS - DEVICE TYPE IN FULL
FZT957
FZT958
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT957 FZT958 UNIT
E
C
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature
Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
=25°C P
amb
CM
C
T
CBO
CEO
EBO
tot
j:Tstg
-300 -400 V
-300 -400 V
-6 V
-2 -1.5 A
-1 -0.5 A
3W
-55 to +150 °C
3 - 289
ELECTRICAL CHARACTERISTICS (at T
FZT957
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1kΩ
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
on
t
off
-330 -440 V
-330 -440 V
I
=-100µA
C
=-1µA, RB ≤1kΩ
I
C
-300 -400 V IC=-10mA*
-6 -8 V
-50-1nA
µA
-50-1nA
µA
=-100µA
I
E
V
=-300V
CB
=-300V, T
V
CB
V
=-300V
CB
=-300V, T
V
CB
-10 nA VEB=-6V
-60
-110
-170
-165
-240
mV
mV
=-100mA, IB=-10mA*
C
I
=-500mA, IB=-100mA*
C
=-1A, IB=-300mA*
I
C
I
mV
-100
-910 -1150 mV IC=-1A, IB=-300mA*
-750 -1020 mV IC=-1A, VCE=-10V*
100
100
90
200
200
170
10
300
I
=-10mA, VCE=-10V*
C
I
=-0.5A, VCE=-10V*
C
=-1A, VCE=-10V*
I
C
I
=-2A, VCE=-10V*
C
85 MHz IC=-100mA, VCE=-10V
f=50MHz
23 pF VCB=-20V, f=1MHz
108
2500
µs. Duty cycle ≤2%
nsnsIC=-500mA, IB1=-50mA
=50mA, VCC=-100V
I
B2
amb
amb
=100°C
=100°C
3 - 290
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