Zetex Semiconductor FZT957 Datasheet
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - SEPTEMBER 1997
FEATURES
* Up to 3.5 Amps continuous collector current, up to 5 Amp peak
*V
* Very low saturation voltage
* Excellent h
PARTMARKING DETAIL - FZT857
COMPLEMENTARY TYPE - FZT957
ABSOLUTE MAXIMUM RATINGS.
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
= 300V
CEO
specified up to 3 Amps
FE
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
FZT857
C
C
B
350 V
300 V
6V
5A
3.5 A
3W
-55 to +150 °C
E
FZT857
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R 1k
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
on
t
off
350 475 V
350 475 V
300 350 V IC=10mA*
68 V
501nA
A
501nA
A
10 nA VEB=6V
100
mV
155
mV
230
mV
345
mV
1250 mV IC=3.5A, IB=600mA*
1.12 V IC=3.5A, VCE=10V*
100
200
100
200
15
300
25
15
80 MHz IC==100mA, VCE=10V
11 pF VCB=20V, f=1MHz
100
nsnsIC=250mA, IB1=25mA
5300
s. Duty cycle 2%
=100A
I
C
=1A, RB1k
I
C
=100A
I
E
V
=300V
CB
V
=300V,
CB
T
=100°C
amb
V
=300V
CB
V
=300V,
CB
T
=100°C
amb
IC=500mA, IB=50mA*
I
=1A, IB=100mA*
C
I
=2A, IB=200mA*
C
I
=3.5A, IB=600mA*
C
IC=10mA, VCE=5V
=500mA, VCE=10V*
I
C
I
=2A, VCE=10V*
C
I
=3A, VCE=10V*
C
f=50MHz
I
=25mA, VCC=50V
B2
Spice parameter data is available upon request for this device
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