Zetex Semiconductor FZT956 Datasheet
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 OCTOBER 1995
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
PARTMARKING DETAILS DEVICE TYPE IN FULL
COMPLEMENTARY TYPES FZT955 - FZT855
FZT956 - N/A
FZT955
FZT956
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT955 FZT956 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C P
amb
CM
C
T
CBO
CEO
EBO
tot
j:Tstg
-180 -220 V
-140 -200 V
-6 V
-10 -5 A
-4 -2 A
3W
-55 to +150 °C
E
C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 284
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
-180 -210 V
-180 -210 V
=-100µA
I
C
I
=-1µA, RB ≤1kΩ
C
-140 -170 V IC=-10mA*
-6 -8 V
-50-1nA
µA
I
=-100µA
E
V
=-150V
CB
=-150V,T
V
CB
amb
=100°C
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
CER
R ≤1kΩ
EBO
V
CE(sat)
-30
-70
-110
-275
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
-970 -1110 mV IC=-3A, IB=-300mA*
-830 -950 mV IC=-3A, VCE=-5V*
200
100
200
100
140
75
10
Transition Frequency f
Output Capacitance C
Switching Times t
T
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
110 MHz IC=-100mA, VCE=-10V
40 pF VCB=-20V, f=1MHz
68
1030
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
-50-1nA
µA
=-150V
V
CB
V
=-150V,T
CB
-10 nA VEB=-6V
-60
-120
-150
-370
300
mV
mV
mV
=-100mA, IB=-5mA*
C
I
=-500mA,IB=-50mA*
C
=-1A, IB=-100mA*
I
C
I
=-3A, IB=-300mA*
C
I
=-10mA, VCE=-5V*
C
=-1A, VCE=-5V*
I
C
I
=-3A, VCE=-5V*
C
=-10A, VCE=-5V*
I
C
I
mV
f=50MHz
nsnsIC=-1A, IB1=-100mA
=100mA, VCC=-50V
I
B2
amb
=100°C
3 - 285 3 - 286
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