Zetex Semiconductor FZT955 Datasheet

SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR

ISSUE 4 - NOVEMBER 2001 ✪

FEATURES
* Up to 5 Amps continuous collector current, up to 10 Amp peak

* Very low saturation voltage
* Excellent h

PARTMARKING DETAIL - FZT855
COMPLEMENTARY TYPE - FZT955

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum

specified up to 10 Amps

FE

=25°C P

amb

CBO

CEO

EBO

CM

C

tot

j:Tstg

FZT855

C

C

B

250 V
150 V

6V

10 A

5A
3W

-55 to +150 °C

E

78

FZT855

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward
Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse width=300

V

(BR)CBO

V

(BR)CER

V

(BR)CEO

V

(BR)EBO

CBO

CER

R 1k

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

on

t

off

250 375 V

250 375 V

150 180 V IC=10mA*

68 V

501nA



A

501nA





A

10 nA VEB=6V

20

40
65
110
355

mV
mV
mV
mV

35
60
260

1250 mV IC=5A, IB=500mA*

1.1 V IC=5A, VCE=5V*

100

200

100

200

15

300
30
10

90 MHz IC==100mA, VCE=10V

22 pF VCB=10V, f=1MHz

66

nsnsIC=1A, IB1=100mA

2130



s. Duty cycle 2%

=100A

I

C

=1A, RB1k

I

C

=100A

I

E

V

=200V

CB

V

=200V,

CB

T

=100°C

amb

V

=200V

CB

V

=200V,

CB

T

=100°C

amb

IC=100mA, IB=5mA*
I

=500mA, IB=50mA*

C

I

=1A, IB=100mA*

C

I

=5A, IB=500mA*

C

IC=10mA, VCE=5V
I

=1A, VCE=5V*

C

I

=5A, VCE=5V*

C

=10A, VCE=5V*

I

C

f=50MHz

I

=100mA, VCC=50V

B2



78