Zetex Semiconductor FZT853, FZT851, FZT953, FZT951 Datasheet
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
FZT851
FZT853
* Extremely low equivalent on-resistance; R
CE(sat)
44mΩ at 5A
C
* 6 Amps continuous current, up to 20 Amps peak current
* Very low saturation voltages
* Excellent h
characteristics specified up to 10 Amps
FE
C
B
PARTMARKING DETAILS - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT851 FZT951
FZT853 FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT851 FZT853 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C P
amb
CM
C
T
CBO
CEO
EBO
tot
j:Tstg
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
150 200 V
60 100 V
66V
20 10 A
6A
3W
-55 to +150 °C
E
3 - 260
FZT851
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1kΩ
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
on
t
off
150 220 V
150 220 V
I
=100µA
C
=1µA, RB ≤1kΩ
I
C
60 85 V IC=10mA*
68 V
I
=100µA
E
501nAµAVCB=120V
V
=120V,
CB
T
=100°C
amb
501nAµAV
CB
V
CB
T
amb
=120V
=120V,
=100°C
10 nA VEB=6V
50
mV
100
170
375
IC=0.1A, IB=5mA*
mV
I
mV
I
mV
I
=1A, IB=50mA*
C
=2A, IB=50mA*
C
=6A, IB=300mA*
C
1200 mV IC=6A, IB=300mA*
1150 mV IC=6A, VCE=1V*
100
100
75
25
200
200
120
50
300
IC=10mA, VCE=1V
I
=2A, VCE=1V*
C
I
=5A, VCE=1V*
C
I
=10A, VCE=1V*
C
130 MHz IC=100mA, VCE=10V
f=50MHz
45 pF VCB=10V, f=1MHz
45
1100
nsnsIC=1A, IB1=100mA
I
=100mA, VCC=10V
B2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 261 3 - 262
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