Zetex Semiconductor FZT789A Datasheet
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; R
* Gain of 200 at I
=2 Amps and very low saturation voltage
C
APPLICATIONS
* Battery powered circuits, fast charge converters
COMPLEMENTARY TYPE - FZT689B
PARTMARKING DETAIL - FZT789A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Saturation Voltages V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CE(sat)
-25 -40 V
-25 -35 V IC=-10mA*
-5 -8.5 V
CE(sat)
CM
C
amb
-0.15
-0.30
-0.30
93mΩ at 3A
CBO
CEO
EBO
tot
j:Tstg
= 25°C)
-0.1
10
-0.1
-0.25
-0.45
-0.50
-25 V
-25 V
-5 V
-6 A
-3 A
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
V
µA
µA
µA
V
V
V
=-15V
CB
=-15V, T
V
CB
V
=-4V
EB
I
=-1A, IB=-10mA*
C
=-2A, IB=-20mA*
I
C
I
=-3A, IB=-100mA*
C
C
B
=100°C
amb
E
C
-0.8 -1.0 V IC=-1A, IB=-10mA*
-0.8 V IC=-1A, VCE=-2V*
300
800 I
250
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
200
100
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
100 MHz IC=-50mA, VCE=-5V, f=50MHz
225 pF VEB=-0.5V, f=1MHz
25 pF VCB=-10V, f=1MHz
35
400
s. Duty cycle ≤2%
µ
Spice parameter data is available upon request for this device
3 - 2463 - 247
=-10mA, VCE=-2V
C
I
=-1A, VCE=-2V*
C
=-2A, VCE=-2V*
I
C
I
=-6A, VCE=-2V*
C
nsnsIC=-500mA, IB1=-50mA
I
=-50mA, VCC=-10V
B2
TYPICAL CHARACTERISTICS
FZT789A FZT789A
lts)
o
(V
-
V
in
lised Ga
a
m
r
- No
h
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
IC/IB=100
IC/IB=40
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC-
V
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
CE(sat)
v IC
T
VCE=2V
1
amb
=25°C
750
in
a
l G
500
ypica
T
-
250
h
10
hFEv IC V
lts)
lts)
o
o
(V
-
V
(V
-
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
V
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
-55°C
+25°C
BE(sat)
v IC
v IC
IC/IB=100
IC/IB=100
ts)
l
o
(V
-
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
V
0.4
0.2
0
0
+25°C
+100°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
VCE=2V
VBE(on) v IC
10
1
DC
1s
100ms
0.1
10ms
1ms
100
µ
s
0.01
0.1
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10 100
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