Zetex Semiconductor FZT755 Datasheet

SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 4  FEBRUARY 1996 ✪

FEATURES
* 25 Volt V
* Low saturation voltage
* Excellent h

COMPLEMENTARY TYPE  FZT655
PARTMARKING DETAIL  FZT755

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse Width=300

CEO

specified up to 6A (pulsed).

FE

=25°C P

amb

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

-55 to +150 °C

-150 V

-150 V IC=-10mA*

-5 V

-0.1

-0.1

µA
µA

-0.5

-0.5VV

-1.1 V IC=-500mA, IB=-50mA*

-1.0 V IC=-500mA, VCE=-5V*

50
50

300

20

30 MHz IC=-10mA, VCE=-20V

20 pF VCB=-10V f=1MHz

µs. Duty cycle ≤2%

FZT755

C

B

-150 V

-150 V

-5 V

-2 A

-1 A

2W

=-100µA

I

C

=-100µA

I

E

V

=-125V

CB

V

=-3V

EB

IC=-500mA, IB=-50mA*
I

=-1A, IB=-200mA*

C

IC=-10mA, VCE=-5V*

=-500mA, VCE=-5V*

I

C

I

=-1A, VCE=-5V*

C

f=20MHz

E

C

FZT755

TYPICAL CHARACTERISTICS

td
tr

ts

tf

µs

e
im

tching t
wi

S

µs

2.0

0.4

0.3

1.0

ts

0.5

td

tf

0.2
tr

0.1

0

0.01

0.1 1

0.8

0.6

- (Volts)

0.4

V

0.2

0

0.001

IC/IB=10

0.01

0.1

1

IB1=IB2=IC/10

VCE=10V

100

%)
(

n
ai

sed G

i
al
m

Nor

-

h

1.2

1.0

ts)
ol

V
(

-

0.8

V

0.6

0.4

Collector Current (Amps)

IC-

V

80

60

40

20

0.001

VCE=5V

0.01

Collector Current (Amps)

IC-

VCE=5V

0.0001

IC- Collector Current (Amps)

BE(on)

V

Collector Current (Amps)

IC-

CE(sat)

v IC

1.0

0.8

ts)
ol

0.6

(V

-

0.4

V

100.1 1

0.2

hFEv IC V

10

Switching Speeds

IC/IB=10

0.001

Collector Current (Amps)

IC-

0.01

BE(sat)

v IC

SinglePulse Test at T

0.1

amb

=25°C

1

1

DC

100ms

0.1

10ms

1ms

µ

s

300

0.001

0.01 0.1

1

0.01

0.1 100

110

VCE- Collector Emitter Voltage (V)

v IC

Safe Operating Area

3 - 239 3 - 238