Zetex Semiconductor FZT753 Datasheet
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 FEBRUARY 1996
FEATURES
* Low saturation voltage
* Excellent h
COMPLEMENTARY TYPE FZT653
PARTMARKING DETAIL FZT753
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device
specified up to 2A
FE
=25°C P
amb
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
-55 to +150 °C
-120 V
-100 V IC=-10mA*
-5 V
-0.17
-0.30
-0.1
-10
-0.1
-0.3
-0.5VV
µA
µA
µA
-0.9 -1.25 V IC=-1A, IB=-100mA*
-0.8 -1.0 V IC=-1A, VCE=-2V*
70
100
55
25
200
200
170
55
300
100 140 MHz IC=-100mA, VCE=-5V
30 pF VCB =-10V f=1MHz
40 ns IC=-500mA, VCC =-10V
600 ns
µs. Duty cycle ≤2%
FZT753
C
B
-120 V
-100 V
-5 V
-6 A
-2 A
2W
=-100µA
I
C
=-100µA
I
E
V
=-100V
CB
V
=-100V,T
CB
=-4V
V
EB
IC=-1A, IB=-100mA*
=-2A, IB=-200mA*
I
C
I
=-50mA, V
C
I
=-500mA, V
C
I
=-1A, V
C
=-2A, VCE =-2V*
I
C
f=100MHz
=-50mA
I
B1=IB2
CE
amb
=-2V*
CE
CE
=-2V*
=100°C
E
C
=-2V*
TYPICAL CHARACTERISTICS
FZT753
s)
t
(Vol
-
V
n
Gai
-
h
0.6
0.5
0.4
0.3
0.2
0.1
0
IC/IB=10
0.0010.0001
0.01
0.1
101
IC- Collector Current (Amps)
CE(sat)
225
175
125
V
75
0
0.01
v IC
VCE=2V
0.1 1
IC- Collector Current ( Amps)
hFEv IC
td
tr
tf
ts
ns
ns
140
1400
e
m
i
120
1200
g t
1000
100
n
i
800
80
itch
w
600
60
S
400
40
200
20
0
0
d
t
t
s
f
t
r
t
0.1
IB1=IB2=IC/10
1
IC- Collector Current (Amps)
Switching Speeds
1.4
s)
1.2
t
(Vol
-
1.0
0.8
V
0.6
10
0.0001
IC/IB=10
0.001
0.01
IC- Collector Current ( Amps)
BE(sat)
V
v IC
100.1 1
Single Pulse T e st at T
10
1.2
1.0
s)
t
(Vol
0.8
-
V
0.6
0.4
VCE=2V
0.001
0.01
100.1 10.0001
IC- Collector Current (Amps)
BE(on)
V
v IC
1
DC
0.1
- Collector Current (A)
C
I
0.01
0.1 100
100ms
10ms
100µs
1s
1ms
VCE- Collector Emitter Voltage (V)
Safe Operating Area
amb
=25°C
110
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