Zetex Semiconductor FZT749 Datasheet

SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 4 - NOVEMBER 1995

FEATURES
* 25 Volt V
* 3 Amp continuous current
* Low saturation voltage
* Excellent h

COMPLEMENTARY TYPE  FZT649
PARTMARKING DETAIL  FZT749

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltages V

Collector Cut-Off
Currents

Saturation Voltages V

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device

CEO

specified up to 6A (pulsed).

FE

=25°C P

amb

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

on

t

off

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

-55 to +150 °C

-35 V

-25 V IC=-10mA*

-5 V

-0.12

-0.40

-0.1

-10

-0.1

-0.3

-0.6VV

µA
µ

µA

A

-0.9 -1.25 V IC=-1A, IB=-100mA*

-0.8 -1.0 V IC=-1A, VCE=-2V*

70
100
75
15

200
200
150
50

300

100 160 MHz IC=-100mA, VCE=-5V

55 100 pF VCB=-10V f=1MHz

40 ns IC=-500mA, VCC=-10V

450 ns

µs. Duty cycle ≤2%

FZT749

C

B

-35 V

-25 V

-5 V

-8 A

-3 A

2W

=-100µA

I

C

=-100µA

I

E

V

=-30V

CB

V

=-30V,T

CB

V

=4V

EB

IC=-1A, IB=-100mA*

=-3A, IB=-300mA*

I

C

I

=-50mA, VCE=-2V*

C

I

=-1A, VCE=-2V*

C

=-2A, VCE=-2V*

I

C

I

=-6A, VCE=-2V*

C

f=100MHz

I

B1=IB2

amb

=-50mA

=100°C

E

C

3 - 2323 - 233

FZT749

TYPICAL CHARACTERISTICS

td

e
tim

g
n

tchi

i
w
S

s)

t

l
o

(V

-

V

1200

1000

tr
tf
ns

160

ts

140

ns

120

100

80

60

600

40

200

20

0

0.01

ts

tf

0.1

Collector Current (Amps)

IC-

tr

IB1=IB2=IC/10

VCE=-10V

td

1

Switching Speeds

1.2

1.0

0.8

0.6

0.4

0.001

IC-

IC/IB=10

0.01 0.1

Collector Current (Amps)

BE(sat)

v IC

IC/IB=100

1

10

1.8

1.6

1.4

s)

t

1.2

ol
V

1.0

(

-

0.8

0.6

V

0.4

0.2

0

0.001

0.01 0.1

Collector Current (Amps)

IC-

CE(sat)

V

200

160

ain
G

-

120

VCE=2V

v IC

IC/IB=100

1

IC/IB=10

10

h

80

40

0.001

0.01 0.1

Collector Current (Amps)

IC-

1

10

hFEv IC V

amb

SinglePulseTest at T

D.C.

1s

100ms

10ms

1.0ms
100µs

110100

Collector Voltage (Volts)

VCE-

Safe Operating Area

t (Amps)
n

rre

r Cu

ecto
ll

Co

­I

10

1.0

0.1

0.01

1.2

1.0

s)

t

0.8

ol
V
(

-

0.6

V

0.4

IC-

VCE=2V

0.001

0.01 0.1

Collector Current (Amps)

BE(on)

V

v IC

10

1

=25°C