Zetex Semiconductor FZT658 Datasheet

SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR

ISSUE 4 - OCTOBER 1995

FEATURES
* 400 Volt V
* Low saturation voltage

COMPLEMENTARY TYPE - FZT758
PARTMARKING DETAIL - FZT658

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device

CEO

=25°C P

amb

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

400 V

400 V IC=10mA*

5V

50
50
40

T

obo

on

t

off

50 MHz IC=10mA, VCE=20V

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

-55 to +150 °C

100 nA VCB=320V

100 nA VEB=4V

0.3

0.25

0.5

V
V
V

0.9 V IC=100mA, IB=10mA*

1.0 V IC=100mA, VCE=5V*

10 pF VCB=20V, f=1MHz
130

3300

µs. Duty cycle ≤2%

ns I

ns

FZT658

C

C

B

B

400 V

400 V

5V

1A

0.5 A

2W

=100µA

I

C

I

=100µA

E

I

=20mA, IB=1mA*

C

=50mA, IB=5mA*

I

C

I

=100mA, IB=10mA

C

I

=1mA, VCE=5V*

C

I

=100mA, VCE=5V*

C

=200mA, VCE=10V*

I

C

f=20MHz

=100mA, VCC=100V

C

I

=10mA, IB2=-20mA

B1

E

E

C

C

FZT658

TYPICAL CHARACTERISTICS

1.6

1.4

)
ts

1.2

ol
V

(

1.0

-

0.8

0.6

V

0.4

0.2

0

0.001

IC/IB=10

IC/IB=20

IC/IB=50

0.01 0.1 20110

T

amb

=25°C

1.6

1.4

)
ts

1.2

ol
V

1.0

- (

0.8

0.6

0.4

V

0.2

0

0.001

IC- Collect or Current (Amps)

CE(sat)

V

1.6

1.4

n

1.2

1.0

sed Gai

i

0.8

al

0.6

Norm

0.4

-

0.2

h

0

0.001

+100°C

+25°C

-55°C

0.01 0.1 20110

v IC

VCE=10V

300

200

100

1.6

1.4

)

1.2

n

ts

ai

ol

1.0

g

V

- (

cal

0.8

ypi

0.6

T

-

0.4

V

h

0.2
0

0.001

-55°C

+25°C

+100°C

+175°C

0.01 0.1 20110

IC/IB=10

IC- Collector Current (Amps)

CE(sat)

V

+25°C

+100°C

+175°C

0.01 0.1 20110

-55°C

v IC

IC/IB=10

IC- Collect or Current (Amps) IC- Collector Current (Amps)

hFEv IC V

BE(sat)

v IC

-55°C

1.6

1.4

1.2

olts)

1.0

V

- (

0.8

0.6

V

0.4

0.2

0

0.001

+25°C

+100°C

+175°C

0.01 0.1 20110

Collector Current (Amps)

IC-

BE(on)

V

v IC

VCE=10V

1

0.1

DC

1s

100ms

0.01

0.001

10ms

1ms

100

s

µ

1

10 100

VCE- Collector Emitter Voltage (V)

Safe Operating Area

1000

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