Zetex Semiconductor FZT655 Datasheet

SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR

ISSUE 3 FEBRUARY 1995 ✪

FEATURES
* Low saturation voltage

COMPLEMENTARY TYPE  FZT755

PARTMARKING DETAIL  FZT655

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

*Measured under pulsed conditions. Pulse Width=300

150 V

150 V IC=10mA*

5V

50
50
20

30 MHz IC=10mA, VCE =20V

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

0.1

0.1

0.5

0.5

-55 to +150 °C

µA
µA

V
V

1.1 V IC=500mA, IB=50mA*

1.0 V IC=500mA, VCE =5V*

300

20 pF VCB =10V, f=1MHz

µs. Duty cycle ≤2%

FZT655

C

B

150 V

150 V

5V

2A

1A

2W

=100µA

I

C

=100µA

I

E

V

=125V

CB

V

=3V

EB

IC=500mA, IB=50mA*

=1A, IB=200mA*

I

C

IC=10mA, VCE =5V*
I

=500mA, VCE =5V*

C

=1A, VCE =5V*

I

C

f=20MHz

E

C

FZT655

TYPICAL CHARACTERISTICS

0.18

s)

t
ol
V

0.10

(

-

V

0

0.01

IC/IB=10

0.1

101

IC- Collect or Current (Amps)

V

1.2

s)

t

1.0

ol
V
(

-

0.8

V

0.6

0.4

IC/IB=10

0.01

CE(sat)

v IC

100.1 1

IC- Collector Curr ent (Amps)

VBE(sat) v IC

)
%

n (
ai

sed G

i
al
m

Nor

-

h

)
ts
ol

V
(

-

V

100

80

60

40

20

0

0.01

IC- Collector Curr ent (Amps)

1.2

1.0

0.8

0.6

0.4

VCE=5V

0.01

IC- Collector Current (Amps)

VBE(on) v IC

VCE=5V

100.1 1

hFE v IC

100.1 1

10

Single Pulse Test at T

1

0.1

0.01

10ms

1ms

300

s

µ

11000

10 100

DC

100ms

VCE- Collector Emitter Voltage (V)

Safe Operating Area

amb

=25°C

e
m

i

t
ng

hi
tc

i
w
S

td
tr
tf

ts

µs

0.7

tdtr0.6

0.5

0.4

0.3
tf

0.2

0.1

0

0.01

IC- Collector Current (Amps)

Switching Speeds

3 - 212 3 - 211

VCE=10V

ts
µs

3.0

2.0

1.0

1

IB1=IB2=IC/10

0.1