Zetex Semiconductor FZT653 Datasheet

SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR

ISSUE 3 FEBRUARY 1995

FEATURES
* Low saturation voltage

COMPLEMENTARY TYPE  FZT753

PARTMARKING DETAIL  FZT653

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base Breakdown

Voltage
Collector Cut-Off Current I

Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter

Saturation Voltage
Base-Emitter

Turn-On Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Output Capacitance C
Switching Times t

*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

on

t

off

120 V

100 V IC=10mA*

5V

70
100
55
25

140 175 MHz IC=100mA, VCE =5V

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

0.1
10

0.1

0.13

0.23

0.3

0.5

-55 to +150 °C

µA
µA

µA

V
V

0.9 1.25 V IC=1A, IB=100mA*

0.8 1.0 V IC=1A, VCE =2V*

200
200

300
110
55

30 pF VCB=10V, f=1MHz
80 ns IC=500mA, VCC =10V
1200 ns

µs. Duty cycle ≤2%

FZT653

C

B

120 V

100 V

5V

6A

2A

2W

=100µA

I

C

=100µA

I

E

V

=100V

CB

V

=100V,T

CB

=4V

V

EB

IC=1A, IB=100mA*

=2A, IB=200mA*

I

C

I

=50mA, V

C

I

=500mA, V

C

I

=1A, V

C

=2A, V

I

C

f=100MHz

I

B1=IB2

=2V*

CE

=2V*

CE

=50mA

amb

CE

CE

=100°C

=2V*

=2V*

E

C

FZT653

0.6

0.5

0.4

)
ts

ol
V

0.3

(

-

0.2

0.1

V

0

TYPICAL CHARACTERISTICS

IC/IB=10

0.0010.0001

0.01

0.1

IC- Collector Current (Amps)

VCE(sat) v IC

225

175

n

i

Ga

-

125

h

75

101

25

0.01

VCE=2V

100.1 1

IC- Collector Current (Amps)

hFE v IC

1.4

)

1.2

ts
ol

V
(

-

1.0

0.8

V

0.6

0.0001

0.001

IC/IB=10

0.01

IC- Collector Current (Amps)

VBE(sat) v IC

10

1

0.1

0.01

Single Pulse Test at T

DC

1s

100ms

10ms

1ms

300

s

µ

0.1 100

110

VCE- Collector Emitter Voltage (V)

Safe Operating Area

amb

=25°C

1.2

1.0

)

ts

0.8

- (Vol

V

0.6

100.1 1

0.4

0.0001

VCE=2V

0.001

0.01

100.1 1

IC- Collector Current (Amps)

VBE(on) v IC

e
m

i

t
ng

hi
tc

i
w
S

td

tr

tf

ts

ns

ns

280

2800

240

2400

2000

200

1600

160

1200

120

800

80

400

40

0

0

0.01

ts

tf

td
tr

0.1

IC- Collector Current (Amps)

IB1=IB2=IC/10

1

Switching Speeds

3 - 210 3 - 209