Zetex Semiconductor FZT651 Datasheet

SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS

ISSUE 2  FEBRUARY 1995

FEATURES
* 60 Volt V
* 3 Amp continuous current
* Low saturation voltage

COMPLEMENTARY TYPE  FZT751

PARTMARKING DETAIL  FZT651

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base Breakdown

Voltage
Collector Cut-Off Current I

Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter

Saturation Voltage
Base-Emitter

Turn-On Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Switching Times t

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device

CEO

=25°C P

amb

amb

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

on

t

off

obo

80 V

60 V IC=10mA*

5V

0.12

0.43

0.9 1.25 V IC=1A, IB=100mA*

0.8 1 V IC=1A, V

70
100
80
40

200
200
170
80

140 175 MHz IC=100mA, VCE =5V

45 ns IC=500mA, VCC =10V

800 ns

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

0.1
10

0.1

0.3

0.6

300

30 pF VCB =10V, f=1MHz

µs. Duty cycle ≤ 2%

µA
µA

µA

V
V

FZT651

C

B

80 V

60 V

5V

6A

3A

2W

-55 to +150 °C

=100µA

I

C

=100µA

I

E

V

=60V

CB

=60V,T

V

CB

V

=4V

EB

IC=1A, IB=100mA*
I

=3A, IB=300mA*

C

I

=50mA, VCE =2V*

C

=500mA, V

I

C

I

=1A, VCE =2V*

C

=2A, VCE =2V*

I

C

f=100MHz

I

B1=IB2

amb

=2V*

CE

=50mA

=100°C

=2V*

CE

E

C

FZT651

0.6

0.5

0.4

)
ts

0.3

- (Vol

0.2

0.1

V

0

TYPICAL CHARACTERISTICS

IC/IB=10

0.0010.0001

0.01

0.1

IC- Collector Current (Amps)

CE(sat)

V

v IC

225

175

n
ai
G

-

125

h

75

101

0

0.01

VCE=2V

100.1 1

IC- Collector Current (Amps)

hFEv IC

1.4

1.2

)
ts

1.0

- (Vol

0.8

V

0.6

0.0001

10

IC/IB=10

0.01

0.001

Collector Current (Amps)

IC-

BE(sat)

V

v IC

Single Pulse Test at T

1

DC

0.1

0.01

0.1 100

1s

100ms

10ms

1ms

100µs

110

VCE- Collector Emitter Voltage (V)

Safe Operating Area

amb

=25°C

1.2

1.0

)
ts

0.8

- (Vol

V

0.6

100.1 1

0.4

0.0001

VCE=2V

0.001

0.01

100.1 1

IC- Collector Current (Amps)

BE(on)

V

v IC

td
tr
tf

ts

ns

ns

140

1400

120

1200

e

1000

100

m

800

80

ng ti

600

60

chi

t

i

400

40

w
S

200

20

0

0

0.01

ts

td

tf

tr

0.1

IB1=IB2=IC/10

1

IC- Collector Current (Amps)

Switching Speeds

3 - 208 3 - 207