Zetex Semiconductor FZT649 Datasheet

SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR

ISSUE 4 FEBRUARY 1996

FEATURES
* 25 Volt V
* 3 Amp continuous current
* Low saturation voltage
* Excellent h

COMPLEMENTARY TYPE  FZT749

PARTMARKING DETAIL  FZT649

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base Breakdown

Voltage
Collector Cut-Off Current I

Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter

Saturation Voltage
Base-Emitter

Turn-On Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Output Capacitance C
Switching Times t

*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device

CEO

specified up to 6A

FE

=25°C P

amb

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

on

t

off

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

-55 to +150 °C

35 V

25 V IC=10mA*

5V

0.12

0.40

0.1
10

0.1

0.3

0.6

µA
µA

µA

V
V

0.9 1.25 V IC=1A, IB=100mA*

0.8 1.0 V IC=1A, VCE=2V*

70
100
75
15

200
200
150
50

300

150 240 MHz IC=100mA, VCE=5V

25 50 pF VCB=10V, f=1MHz
55 ns IC=500mA, VCC=10V
300 ns

s. Duty cycle ≤2%

µ

FZT649

C

B

35 V

25 V

5V

8A

3A

2W

=100µA

I

C

=100µA

I

E

V

=30V

CB

V

=30V,T

CB

V

=4V

EB

IC=1A, IB=100mA*

=3A, IB=300mA*

I

C

I

=50mA, VCE=2V*

C

I

=1A, VCE=2V*

C

=2A, VCE=2V*

I

C

I

=6A, VCE=2V*

C

f=100MHz

I

B1=IB2

amb

=50mA

=100°C

E

C

FZT649

TYPICAL CHARACTERISTICS

0.8

0.6

ts)
ol

(V

-

0.4

0.2

V

2.0

ts)
ol

V
(

-

1.0

IC/IB=10

0

0.01

IC -

0.1

Collector Current (Amps)

CE(sat)

V

v IC

IC/IB=10

101

V

0.4

0.01

Collector Current (Amps)

IC -

BE(sat)

V

v IC

100.1 1

200

n

ai
G

-

100

h

20

0.001

0.01

Collector Current (Amps)

IC -

VCE=2V

100.1 1

hFEv IC

1.4

1.2

ts)

1.0

ol
V

(

-

0.8

V

0.6

VCE=2V

0.01

0.0010.0001

Collector Current (Amps)

IC -

V

BE(on)

0.1

v IC

110

10

SinglePulseTestatT

amb

=25°C

1

DC

0.1

0.01

1s

100ms

10ms

1ms

100

s

µ

0.1 100

110

VCE- Collector Emitter Voltage (V)

Safe Operating Area

td
tr
tf
ns

140

e

120

tim

100

ng

i

80

tch
wi

60

S

40

20

0

0.01

td

tr

tf

ts

0.1

Collect or Current (Amps)

IC -

IB1=IB2=IC/10

ts
ns

1000

800

600

400

200

0

1

Switching Speeds

3 - 206 3 - 205