Zetex Semiconductor FZT605 Datasheet
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 4 - MARCH 2001
FEATURES
* Guaranteed h
* Fast Switching
PARTMARKING DETAIL - FZT605
COMPLEMENTARY TYPES - FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Base-Emitter Turn-On Voltage V
Static Forward
Current Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
* Measured under pulsed conditions. Pulse width = 300
Spice parameter data is available upon request for these devices.
Specified up to 2A
FE
V
(BR)CBO
V
(BR)CEO
(BR)EBO
I
CBO
EBO
CES
V
CE(sat)
BE(sat)
BE(on)
h
FE
t
ibo
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
140 V
120 V IC=10mA*
10 V
0.01
µA
10
µA
0.1
µA
10
µA
1.0,
1.5VV
1.8 V IC=1A, IB=1mA*
1.7 V IC=1A, VCE=5V*
2K
5K
2K
100K
0.5K
150 MHz IC=100mA, VCE=10V
90 Typical pF VEB=500mV, f=1MHz
15 Typical pF VCB=10V, F=1MHz
0.5 Typical nsec IC=500mA, VCE=10V
1.6 Typical nsec
µs. Duty cycle 2%
FZT605
C
C
B
140 V
120 V
10 V
4A
1.5 A
2W
-55 to +150 °C
I
=100µA
C
=100µA
I
E
V
=120V
CB
=120V,T
V
CB
V
=8V
EB
=120V
V
CES
IC=250mA, IB=0.25mA*
I
=1A, IB=1mA*
C
IC=50mA, VCE=5V
I
=500mA, VCE=5V*
C
I
=1A, VCE=5V*
C
I
=2A, VCE=5V*
C
f=20MHz
I
=0.5mA
B1=IB2
amb
=100°C
E
TBA
FZT605
TYPICAL CHARACTERISTICS
1.8
1.6
)
1.4
s
t
l
o
1.2
V
(
-
1.0
)
t
a
s
0.8
(
E
C
0.6
V
0.4
0.2
0
2.2
2.0
1.8
1.6
)
s
t
1.4
l
o
V
(
1.2
-
)
t
1.0
a
s
(
E
0.8
B
V
0.6
0.4
-55°C
+25°C
+100°C
+175°C
IC/IB=100
0.01
0.1
IC - Collector Current (Amps)
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01
v IC
IC - Collector Current (Amps)
BE(sat)
V
v IC
IC/IB=100
2.5
p
m
A
2.0
1
o
t
d
1.5
e
s
i
l
a
m
1.0
r
o
n
n
i
0.5
a
G
-
E
F
101
h
0.001
-55°C
+25°C
+100°C
0.01
Collector Current (Amps)
IC -
VCE=5V
100.1 1
hFEv IC
2.2
2.0
1.8
1.6
)
s
t
l
1.4
o
V
(
1.2
-
E
1.0
B
V
0.8
0.6
100.1 1
0.4
-55°C
+25°C
+100°C
0.01
0.1
110
IC - Collector Current (Amps)
BE(on)
V
v IC
VCE=5V
10
1
DC
1s
100ms
10ms
-Collector Current (A)
C
I
0.1
0.01
100µs
1ms
10 1001
VCE- Collector Emitter Voltage (V)
FZT604 Safe Operating Area
1000
78
10
1
DC
1s
100ms
10ms
0.1
-Collector Current (A)
C
I
0.01
1ms
100µs
1
10 100
1000
VCE - Collector Emitter Voltage (V)
FZT605 Safe Operating Area
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