Zetex Semiconductor FZT591A Datasheet
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 - DECEMBER 2001
FEATURES
Low equivalent on resistance R
= 350m at 1A
CE(sat)
FZT591A
C
PART MARKING DETAIL - FZT591A
COMPLEMENTARY TYPE - FZT491A
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
CES
V
CE(sat)
-40 V
-40 V IC=-10mA*
-5 V
-100 nA VCB=-30V
-100 nA VEB=-4V
-100 nA V
-0.2
-0.35
-0.5
Base-Emitter Saturation Voltage V
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer Ratio h
BE(sat)
BE(on)
FE
300
300
-1.1 V IC=-1A, IB=-50mA*
-1.0 V IC=-1A, VCE=-5V*
800
250
160
30
Transition Frequency f
Output Capacitance C
T
obo
150 MHz IC=-50mA, VCE=-10V
10 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
-40 V
-40 V
-5 V
-2 A
-1 A
-200 mA
2mW
-55 to +150 °C
I
=-100µA
C
I
=-100µA
E
=-30V
CES
V
IC=-100mA,IB=-1mA*
V
I
=-500mA,IB=-20mA*
C
V
I
=-1A, IB=-100mA*
C
I
=-1mA,
C
I
=-100mA*,
C
I
=-500mA*, VCE=-5V
C
I
=-1A*,
C
I
=-2A*,
C
f=100MHz
E
C
1
FZT591A
2
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