Zetex Semiconductor FZT558 Datasheet
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 DECEMBER 1995
FEATURES
* 400 Volt V
* 200mA continuous current
*P
tot
PARTMARKING DETAIL - FZT558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Collector-Base
Breakdown Voltage
Switching times t
* Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
= 2 Watt
CEO
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
on
t
off
CBO
CEO
EBO
C
tot
-55 to +150 °C
amb
j:Tstg
= 25°C).
-400 V
-400 V IC=-10mA*
-5 V
-100 nA VCB=-320V
-100 nA VCE=-320V
-100 nA VEB=-4V
-0.2
-0.5VV
-0.9 V IC=-50mA, IB=-5mA*
-0.9 V IC=-50mA, VCE=-10V*
100
100
300
15
50 MHz IC=-10mA, VCE=-20V
5pFV
95
1600
µs. Duty cycle ≤2%
ns
ns
FZT558
C
B
-400 V
-400 V
-5 V
-200 mA
2W
=-100µA
I
C
=-100µA
I
E
IC=-20mA, IB=-2mA*
=-50mA, IB=-6mA*
I
C
IC=-1mA, VCE=-10V
=-50mA, VCE=-10V*
I
C
I
=-100mA, VCE=-10V*
C
f=20MHz
=-20V, f=1MHz
CB
IC=-50mA, VC=-100V
=5mA, IB2=-10mA
I
B1
E
C
TYPICAL CHARACTERISTICS
FZT558
1.6
1.4
1.2
ts)
1.0
- (Vol
0.8
0.6
0.4
V
0.2
0
0.001 0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
IC- Collector Current (Amps)
CE(sat)
in
alised Ga
rm
- No
h
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
0.01 0.1 20110
IC-
Collect or Current (Amps)
v IC
VCE=10V
300
200
100
hFEv IC V
-55°C
1.6
1.4
ts)
1.2
1.0
- (Vol
0.8
0.6
0.4
V
0.2
0
+25°C
+100°C
+175°C
0.01 0.1 20110
IC/IB=10
IC- Collector Current (Amps)
CE(sat)
V
1.6
1.4
1.2
ts)
1.0
cal Gain
- (Vol
ypi
0.8
T
-
0.6
h
0.4
V
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
IC-
Collector Current (Amps)
-55°C
BE(sat)
v IC
IC/IB=10
v IC
-55°C
1.6
1.4
1.2
ts)
1.0
- (Vol
0.8
0.6
V
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
VCE=10V
IC- Collector Current (Amps)
BE(on)
V
v IC
3 - 193 3 - 192
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