Zetex Semiconductor FZT491 Datasheet

SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3 - OCTOBER 1995 ✪

FZT491

C

COMPLEMENTARY TYPE  FZT591
PARTMARKING DETAIL  FZT491

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

CBO

CEO

EBO

CM

C

B

tot

j:Tstg

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltage V

Collector Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current h

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

FE

80 V

60 V IC=10mA*

5V

100 nA VCB=60V

100 nA VEB=4V

100 nA V

0.25

0.5

1.1 V IC=1A, IB=100mA*

1.0 V IC =1A, VCE =5V*

100
100

300
80
30

Transition Frequency f

Output Capacitance C

T

obo

*Measured under pulsed conditions. Pulse width=300

150 MHz IC=50mA, VCE=10V,

10 pF VCB=10V, f=1MHz

µs.

For typical characteristics graphs see FMMT491 datasheet

80 V

60 V

5V

2A

1A

200 mA

2W

-55 to +150 °C

=100µA

I

C

=100µA

I

E

=60V

CES

V
V

IC=500mA, IB =50mA*
I

=1A, IB =100mA*

C

I

=1mA, VCE =5V

C

I

=500mA, VCE =5V*

C

I

=1A, VCE =5V*

C

= 2A, VCE =5V*

I

C

f =100MHz

E

C

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