Zetex Semiconductor FZT458 Datasheet

SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR

ISSUE 4  JANUARY 1996

FEATURES
* 400 Volt V

CEO

FZT458

C

COMPLEMENTARY TYPE  FZT558
PARTMARKING DETAIL  FZT458

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Peak Pulse Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

CBO

CEO

EBO

C

CM

B

tot

j:Tstg

= 25°C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltages V

Collector Cut-Off Currents I

Emitter Cut-Off Current I

Emitter Saturation Voltages V

Base-Emitter
Turn On Voltage

Static Forward
Current Transfer Ratio

(BR)CBO

V

CEO(sus)

V

(BR)EBO

CBO

I

CES

EBO

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

400 V

400 V IC=10mA*

5V

100 nA VCB=320V

100 nA VCE=320V

100 nA VEB=4V

0.2

0.5

0.9 V IC=50mA, IB=5mA*

0.9 V IC=50mA, VCE=10V*

100
100

300

15

Transition Frequency f

Collector-Base
Breakdown Voltage

Switching times t

*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet

T

C

obo

on

t

off

50 MHz IC=10mA, VCE=20V

5pFV

135 Typical

2260 Typical

µs. Duty cycle ≤ 2%

400 V

400 V

5V

300 mA

1A

200 mA

2W

-55 to +150 °C

=100µA

I

C

=100µA

I

E

V
V

IC=20mA, IB=2mA*
I

=50mA, IB=6mA*

C

IC=1mA, VCE=10V

=50mA, VCE=10V*

I

C

I

=100mA, VCE=10V*

C

f=20MHz

=20V, f=1MHz

CB

ns
ns

IC=50mA, VCC=100V

=5mA, IB2=-10mA

I

B1

E

C

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