Zetex Semiconductor FZT1053A Datasheet
SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - MARCH 2001
FZT1053A
FEATURES
CEO
= 75V
*V
C
* 4.5 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
*High Gain
* Extremely Low Equivalent On-resistance; R
= 78mΩ at 4.5A
CE(sat)
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C † P
amb
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
150 V
75 V
7.5 V
10 A
4.5 A
500 mA
2.5 W
-55 to +150 °C
E
C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1053A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
150 250 V
150 250 V
75 100 V IC=10mA
150 250 V
7.5 8.8 V
0.9 10 nA VCB=120V
0.3 10 nA VEB=4V
1.5 10 nA V
21
55
150
160
350
30
75
200
210
440
900 1000 mV IC=3A, IB=100mA*
825 950 mV IC=3A, VCE=2V*
270
300
300
40
440
450
450
60
1200
20
Switching Times t
Transition Frequency f
Output Capacitance C
on
t
off
T
obo
162 ns
900 ns
140 MHz IC=50mA, VCE=10V
21 30 pF VCB=10V, f=1MHz
mV
mV
mV
mV
mV
UNIT
CONDITIONS.
I
=100µA
C
=100µA
I
C
=100µA, VEB=1V
I
C
=100µA
I
E
CES
IC=0.2A, IB=20mA*
I
=0.5A, IB=20mA*
C
I
=1A, IB=10mA*
C
I
=2A, IB=100mA*
C
I
=4.5A, IB=200mA*
C
IC=10mA, VCE=2V*
I
=0.5A, VCE=2V*
C
=1A, VCE=2V*
I
C
I
=4.5A, VCE=2V*
C
I
=10A, VCE=2V*
C
=2A, IB1=IB2=±20mA,
I
C
V
=50V
CC
=2A, IB1=IB2=±20mA,
I
C
V
=50V
CC
f=100MHz
=120V
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