Zetex Semiconductor FMMTL718 Datasheet
C
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; R
COMPLEMENTARY TYPE – FMMTL618
=210mΩ at 1.5A
CE(sat)
FMMTL718
E
PARTMARKING DETAIL – L78
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
-20 V
-20 V
-5 V
-1 A
-2 A
-200 mA
-500 mW
-55 to +150 °C
B
FMMTL718
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
-20 -65 V
I
=-100µA
C
-20 -55 V IC=-10mA*
-5 -8.8 V
=-100µA
I
E
-10 nA VCB=-15V
-10 nA VEB=-4V
-10 nA VCE=-15V
-33
-130
-230
-315
-50
-180
-320
-450
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
I
=-500mA, IB=-20mA*
C
I
=-1A, IB=-50mA*
C
I
=-1.5A,IB=-100mA
C
-950 -1100 mV IC=-1.25A, IB=-100mA*
-850 -1000 mV IC=-1.25A, VCE=-2V*
300
300
200
120
50
500
450
320
200
80
IC=-10mA, VCE=-2V
I
=-100mA, VCE=-2V*
C
I
=-0.5A, VCE=-2V*
C
I
=-1A, VCE=-2V*
C
I
=-1.5A, VCE=-2V*
C
265 MHz IC=-50mA, VCE=-10V
f=100MHz
912pFV
108
121
ns
ns
=-10V, f=1MHz
CB
IC=-1A, VCC=-10V
I
B1=IB2
=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Loading...