Zetex Semiconductor FMMTH10 Datasheet
SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 NOVEMBER 1995
FEATURES
*High f
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
PARTMARKING DETAIL 3EZ
=650MHz
T
FMMTH10
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CES
CEO
EBO
C
CM
tot
j:Tstg
= 25°C)
30 V
25 V
3V
25 mA
50 mA
330 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Common Base Feedback
Capacitance
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector Base Capacitance C
Collector Base Time Constant r
Noise Figure N
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
C
rb
V
BE(on)
h
FE
T
cb
bCc
f
30 V
=100µA, I
I
C
=0
E
25 V IC=1mA, IB=0
3V
=10µA, I
I
E
=0
C
100 nA VCB=25V, IE=0
100 nA VEB=2V,IC=0
0.5 V IC=4mA, IB=0.4mA
Typ.
0.45
0.65 pF VCB=10V, IE=0
f=1MHz
0.95 V IC=4mA, VCE=10V
60 IC=4mA, VCE=10V*
650 MHz IC=4mA, VCE=10V, f=100MHz
0.7 pF VCB=10V, IE=0, f=1MHz
9psI
Typ .35dBI
µs. Duty cycle ≤2%
=4mA, VCB=10V, f=31.8MHz
C
=2mA, VCE=5V
C
f=500MHz,
FMMTH10
TYPICAL CHARACTERISTICS
n
i
a
-G
h
z)
- (MH
f
200
150
100
50
0
1500
1000
500
0
175°C
100°C
25°C
-55°C
0.1 1 10
IC - (mA)
hFEv IC
IC - (mA)
VCE=-10V
VCE=10V
f=100MHz
1.0
CE
V
=-10V
-55°C
25°C
100°C
175°C
1000.1 1 10
100
0.8
lts)
0.6
o
V
(
-
0.4
V
0.2
0
IC - (mA)
BE(on)
V
1.2
1.0
0.8
v IC
)
0.6
pF
(
-
0.4
C
0.2
1000.1 1 10
0
0.1 1 10
V
-
CB
(Volts)
30
CCBv VCB fTv IC
3 - 182 3 - 181
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