Zetex Semiconductor FMMTA06 Datasheet
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 5 – MARCH 2001
FEATURES
* 80 Volt V
* Gain of 50 at IC=100mA
CEO
FMMTA06
C
E
PARTMARKING DETAIL – FMMTA06 – 1G
FMMTA06R – MA
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL VALUE UNIT CONDITIONS.
MIN. MAX.
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
Collector-Emitter Saturation
Voltage
Base-Emitter
Turn-On Voltage
Transition
Frequency
*Measured under pulsed conditions. Pulse width=300
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
80 V IC=1mA*
4V
0.1
0.1
µA
µA
50
50
0.25 V IC=100mA, IB=10mA*
1.2 V IC=100mA, VCE=1V*
100 MHz IC=10mA, VCE=2V
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
80 V
80 V
4V
500 mA
330 mW
-55 to +150 °C
=100µA
I
E
V
=60V
CES
=80V
V
CB
IC=10mA, VCE=1V*
I
=100mA, VCE=1V*
C
f=100MHz
B
TBA
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