Zetex Semiconductor FMMT918 Datasheet
SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 2 JANUARY 1996
PARTMARKING DETAILS 3B
FMMT918
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
30 V
15 V
3V
100 mA
330 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Input Capacitance C
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
V
CE(sat)
V
BE(sat)
h
FE
T
obo
ibo
Noise Figure N 6.0 dB V
Common Emitter
Power Gain
*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device
G
pe
30 V
=1µA, I
I
C
=0
E
15 V IC=3mA, IB=0*
3V
0.05
µA
=10µA, I
I
E
V
=15V, IE=0
CB
=0
C
0.4 V IC=10mA, IB=1mA
1.0 V IC=10mA, IB=1mA
20 IC=3mA, VCE=1V
600 MHz IC=4mA, VCE=10V
f=100MHz
3.0
1.7
pF
pF
VCB=0V, f=1MHz
=10V, f=1MHz
V
CB
1.6 pF VEB=0.5V,f=1MHz
=6V, IC=1mA
CE
f=60MHz, R
=400Ω
G
15 dB VCB=12V, IC=6mA
f=200MHz
µs. Duty cycle ≤2%
3 - 168
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