Zetex Semiconductor FMMT634 Datasheet
“SuperSOT” SOT23 NPN SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – APRIL 97
FEATURES
* 625mW POWER DISSIPATION
* Highest current capability SOT23 Darlington
* Very high hFE - specified at 2A (5K minimum)
- typically 600 at 5A
COMPLEMENTARY TYPE – FMMT734
PARTMARKING DETAIL – 634
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
FMMT634
C
SOT23
120 V
100 V
12 V
5A
900 mA
625 mW
-55 to +150 °C
E
B
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm.
**Measured under pulsed conditions . Pulse width=300µs. Duty cycle ≤ 2%.
FMMT634
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
120 170 V
I
=100µA
C
100 115 V IC=10mA*
12 16 V
=100µA
I
E
10 nA VCB=80V
10 nA VEB=7V
0.67
0.72
0.75
0.82
0.68
0.85
100 nA V
0.75
V
0.80
V
V
0.85
V
0.93
V
—
0.96
=80V
CES
=100mA, IB=1mA *
I
C
I
=250mA, IB=1mA *
C
I
=500mA, IB=5mA *
C
I
=900mA, IB=5mA *
C
I
=900mA, IB=5mA *†
C
I
=1A, IB=5mA *
C
1.5 1.65 V IC=1A, IB=5mA *
1.33 1.5 V IC=1A, VCE=5V*
Static Forwar d
Current Transfer
Ratio
h
FE
20K
15K
5K
50K
60K
40K
14K
600
24K
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
† T
=150°C
j
f
T
obo
(on)
(off)
140 MHz IC=50mA, VCE=10V
920pFVCB=10V, f=1MHz
290 ns IC=500mA
2.4
µs
=10mA, VCE=5V *
I
C
I
=100mA, VCE=5V *
C
I
=1A, VCE=5V *
C
I
=2A, VCE=5V *
C
I
=5A, VCE=5V *
C
I
=1A, VCE=2V *
C
f=100MHz
V
=20V
CC
=±1mA
I
B
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