Zetex Semiconductor FMMT723, FMMT720, FMMT718, FMMT717, FMMT625 Datasheet
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SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*IC CONT 3A
* 12A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; R
Characteristics Up To 12A (pulsed)
FE
CE(sat)
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
C
E
B
DEVICE TYPE COMPLEMENT PARTMARKING R
FMMT617 FMMT717 617 50mΩ at 3A
FMMT618 FMMT718 618 50m
FMMT619 FMMT720 619 75m
FMMT624 FMMT723 624 -
FMMT625 625 -
ABSOLUTE MAXIMUM RATINGS.
FMMT
PARAMETER SYMBOL
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C* P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
FMMT
617
15 20 50 125 150 V
15 20 50 125 150 V
55555V
126633A
32.5211A
CE(sat)
Ω at 2A
Ω at 2A
FMMT
FMMT
618
619
FMMT
624
500 mA
625 mW
-55 to +150 °C
625 UNIT
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3 - 149
FMMT624
FMMT625
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
(ON)
(OFF)
OBO
FMMT624 FMMT625
MIN. TYP. MAX. MIN. TYP. MAX.
125 250 150 300 V
125 160 150 175 V IC=10mA*
58.3
26
70
160
165
0.85 1.0 0.85 1.0 V IC=1A, IB=50mA*
0.7 1.0 0.74 1.0 V IC=1A, VCE=10V*
200
400
300
450
100
140
18
100 155 100 135 MHz IC=50mA, VCE=10V
7
60
1300 1500 ns
= 25°C unless otherwise stated).
amb
58.3 V
100
100nAnA
100 100 nA VEB=4V
100
100nAnA
50
26
110
50
200
150
220
250
200
300
30
180
400
450
45
300
15
15 6 10 pF VCB=10V, f=1MHz
160 ns VCC=50V, IC=0.5A
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
UNIT CONDITIONS.
I
=100µA
C
I
=100µA
E
VCB=100V
=130V
V
CB
V
=100V
CES
=130V
V
CES
mV
IC=0.1A, IB=10mA*
=0.1A, IB=1mA*
mV
I
C
I
=0.5A, IB=50mA*
mV
C
I
mV
=0.5A, IB=10mA*
C
mV
I
=1A, IB=50mA*
C
IC=10mA, VCE=10V*
I
=0.2A, VCE=10V*
C
I
=1A, VCE=10V*
C
=3A, VCE=10V*
I
C
f=100MHz
=-IB2=50mA
I
B1
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