Zetex Semiconductor FMMT596 Datasheet
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
FMMT596
PARTMARKING DETAIL 596
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
CES
V
CE(sat)
V
BE(sat)
-220 V
-200 V IC=-10mA*
-5 V
-100 nA VCB=-200V
-100 nA VEB=-4V
-100 nA V
-0.2
-0.35VV
-1.0 V IC=-250mA,IB=-25mA*
-220 V
-200 V
-5 V
-1 A
-0.3 A
-200 mA
500 mW
-55 to +150 °C
=-100µA
I
C
I
=-100µA
E
=-200V
CES
IC=-100mA,IB=-10mA
I
=-250mA,
C
=-25mA*
I
B
E
B
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer Ratio h
Transition Frequency f
Output Capacitance C
BE(on)
FE
T
obo
*Measured under pulsed conditions. Pulse width=300
3 - 143
-0.9 V IC=-250mA,
V
=-10V*
CE
100
100
85
35
300
I
=-1mA, VCE=-10V
C
=-100mA,VCE=-10V*
I
C
I
=-250mA,VCE=-10V*
C
=-400mA,VCE=-10V*
I
C
150 MHz IC=-50mA, VCE=-10V
f=100MHz
10 pF VCB=-10V, f=1MHz
µs. Duty cycle ≤ 2%
FMMT596
TYPICAL CHARACTERISTICS
320
240
0.4
0.3
0.2
0.1
0
160
0.8
0.6
0.4
0.2
0
0.4
I
+25 ° C
IC/IB=10
IC/IB=50
1mA
100mA10mA
1A
IC-Collector Current
CE(sat)
V
+100 ° C
+25 °C
-55 °C
80
0
1mA
I
C-Collector Current
hFEV I
=10V
V
CE
1.0
1mA
C
v I
100mA10mA 1A
C
-55 °C
+25 ° C
+100 °C
100mA10mA
V
=10V
CE
1A
IC-Collector Current
BE(on)
V
v I
C
=10
C/IB
0.3
0.2
0.1
0
1mA
1.0
I
=10
C/IB
0.8
0.6
0.4
0.2
0
1mA
-55 °C
+25 °C
+100 °C
I
-Collector Current
C
CE(sat)
V
10mA
v I
C
IC-Collector Current
BE(sat)
V
1
0.1
DC
1s
0.01
0.001
100ms
10ms
1ms
s
100
µ
0.1V 10V 100V
1V
v I
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100mA
C
-55 °C
+25 °C
+100 ° C
1A10mA 100mA
1A
1000V
3 - 144
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