Zetex Semiconductor FMMT591 Datasheet

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3 - OCTOBER 1995 ✪

FEATURES
* Low Equivalent on resistance R

=355mΩ at 1A*

CE(sat)

FMMT591

C

E

COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

CBO

CEO

EBO

CM

C

B

tot

j:Tstg

= 25°C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base Breakdown Voltage V

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-on Voltage V

Static Forward Current Transfer
Ratio

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

-80 V

-60 V IC=-10mA, IB=0*

-5 V

-100 nA VCB=-60V

-100 nA VEB=-4V, IC=0

-100 nA V

-0.3

-0.6

-1.2 V IC=-1A, IB=-100mA*

-1.0 V IC=-1A, VCE=-5V*

100
100

300
80
15

Transition Frequency f

Output Capacitance C

T

obo

*Measured under pulsed conditions. Pulse width=300

150 MHz IC=-50mA, VCE=-10V

10 pF VCB=-10V, f=1MHz

µs. Duty cycle ≤ 2%

-80 V

-60 V

-5 V

-2 A

-1 A

-200 mA

500 mW

-55 to +150 °C

=-100µA, I

I

C

=-100µA, I

I

E

=-60V

CES

=0

E

=0

C

VVIC=-500mA,IB=-50mA*

I

=-1A, IB=-100mA*

C

I

=-1mA, VCE=-5V*

C

I

=-500mA, VCE=-5V*

C

=-1A, VCE=-5V*

I

C

I

=-2A, VCE=-5V*

C

f=100MHz

B

3 - 137

FMMT591

TYPICAL CHARACTERISTICS

400

300

200

100

0.6

+25°C

0.5

0.4

0.3

0.2

IC/IB=10
IC/IB=50

0.1

0

1mA

100mA10mA

10A1A

IC-Collector Current

CE(sat)

V

CE

=5V

V

v I

C

0.6

C/IB

=10

I

0.5

0.4

0.3

-55 °C

+25 °C

+100 °C

0.2

0.1

0

1mA

10A1A10mA 100mA

IC-Collector Current

CE(sat)

V

v I

C

C/IB

=10

I

1.0

+100 °C

+25 °C

-55 °C

0.8

0.6

0.4

-55 °C
+25 °C

+100 °C

0.2

0

1mA

100mA10mA

-Collector Current

I

C

C

hFEV I

1A

10A

0

1mA

10mA

100mA 1A 10A

IC-Collector Current

BE(sat)

V

v I

C

1.2

CE

V

=5V

10

1.0

0.8

0.6

-55 °C

0.4

+25 °C

+100 °C

0.2

0

1mA

100mA10mA

1A

10A

IC-Collector Current

BE(on)

V

v I

C

1

DC

1s

100ms

0.1

10ms

1ms

100us

0.01

0.1V 10V 100V

1V

VCE- Collector Emitter Voltage (V)

Safe Operating Area

3 - 138