Zetex Semiconductor FMMT589 Datasheet

SOT23 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR

ISSUE 5 - JANUARY 1997 ✪

FEATURES
* Low equivalent on-resistance; R

PARTMARKING DETAILS - 589
COMPLEMENTARY TYPE - FMMT489

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Collector -Emitter Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-on Voltage

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300
For typical Characteristics graphs see FMMT549 datasheet

250mΩ at 1A

CE(sat)

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

I

CES

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

CBO

CEO

EBO

CM

C

B

tot

j:Tstg

= 25°C).

amb

-50 V

-30 V IC=-10mA*

-5 V

-100 nA VCB=-30V

-100 nA V

-100 nA VEB=-4V

-0.25

-0.35

-0.65

-1.2 V IC=-1A, IB=-100mA*

-1.1 V IC=-1A, VCE=-2V*

100
100

300
80
40

100 MHz IC=-100mA, VCE=-5V

15 pF VCB=-10V, f=1MHz

µs. Duty cycle ≤ 2%

3 - 136

FMMT589

C

-50 V

-30 V

-5 V

-2 A

-1 A

-200 mA

500 mW

-55 to +150 °C

=-100µA

I

C

=-100µA

I

E

=-30V

CES

V
V
V

I

=-0.5A, IB=-50mA*

C

I

=-1A, IB=-100mA*

C

=-2A, IB=-200mA*

I

C

I

=-1mA, VCE=-2V*

C

=-500mA, VCE=-2V*

I

C

I

=-1A, VCE=-2V*

C

=-2A, VCE=-2V*

I

C

f=100MHz

E

B