Zetex Semiconductor FMMT558 Datasheet
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent h
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL 558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn On Voltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Collector-Base Breakdown
Voltage
Switching times t
* Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
characteristics at IC=100mA
FE
V
(BR)CBO
V
BR(CEO)
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
C
obo
on
t
off
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
amb
-400 V
-400 V IC=-10mA*
-5 V
; I
CES
-100 nA VCB=-320V; VCE=320V
-100 nA VEB=-4V
-0.2
-0.5VV
-0.9 V IC=-50mA, IB=-5mA *
-0.9 V IC=-50mA, VCE=-10V *
100
10015300
50 MHz IC=-10mA, V
5pFV
95
1600nsns
µs. Duty cycle ≤2%
FMMT558
C
-400 V
-400 V
-5 V
-500 mA
-150 mA
-200 mA
500 mW
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
IC=-20mA, IB=-2mA *
I
=-50mA, IB=-6mA *
C
IC=-1mA, V
=-50mA, V
I
C
I
=-100mA, VCE =-10V*
C
f=20MHz
=-20V, f=1MHz
CB
IC=-50mA, V
=5mA, IB2=-10mA
I
B1
CE
CE
CE
CE
=-10V
=-10V *
=-20V
=-100V
E
B
3 - 133
FMMT558
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
ts)
1.0
- (Vol
0.8
0.6
0.4
V
0.2
0
0.001 0.001
1.6
n
1.4
1.2
sed Gai
i
1.0
al
0.8
rm
0.6
- No
0.4
h
0.2
0
0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
IC-
Collector Current (Amps)
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1 20110
IC-
Collector Current (Amps)
v IC
VCE=10V
300
200
100
hFEv IC V
-55°C
1.6
1.4
ts)
1.2
1.0
- (Vol
0.8
0.6
V
0.4
0.2
0
1.6
1.4
1.2
ts)
1.0
- (Vol
ypical Gain
0.8
T
-
0.6
h
0.4
V
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
IC-
Collector Current (Amps)
CE(sat)
V
+25°C
+100°C
+175°C
0.01 0.1 20110
IC-
Collector Current (Amps)
-55°C
BE(sat)
v IC
v IC
IC/IB=10
IC/IB=10
0.01
0.001
1
0.1
DC
1s
100ms
10ms
1ms
100
s
µ
1V
10V 100V
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1000V
-55°C
1.6
1.4
)
1.2
ts
1.0
- (Vol
0.8
0.6
V
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
IC-
Collector Current (Amps)
VCE=10V
VBE(on) v IC
3 - 134
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