Zetex Semiconductor FMMT555 Datasheet
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* 150 Volt V
* 1 Amp continuous current
COMPLEMENTARY TYPE FMMT455
PARTMARKING DETAIL 555
CEO
FMMT555
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
-160 V
-150 V
-5 V
-2 A
-1 A
-200 mA
500 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
* Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
-160 V
=-100µA
I
C
-150 V IC=-10mA*
-5 V
-0.1
-10
-0.1
µA
µ
µA
A
=-100µA
I
E
V
=-140V
CB
=-140V, T
V
CB
V
=-4V
EB
amb
=100°C
-0.3 V IC=-100mA, IB=-10mA*
-1 V IC=-100mA, IB=-10mA*
-1 V IC=-100mA, VCE =-10V*
50
50 300
IC=-10mA, VCE =-10V*
I
=-300mA, VCE =-10V*
C
100 MHz IC=-50mA, VCE =-10V
f=100MHz
10 pF VCB =-10V, f=1MHz
µs. Duty cycle ≤2%
3 - 1313 - 132
FMMT555
TYPICAL CHARACTERISTICS
me
i
t
ng
chi
t
Swi
ts)
ol
V
(
-
V
ns
500
400
300
200
100
-1.4
-1.2
-1.0
-0.8
-0.6
0
ZTX5 5 4 /5 5 - 2
tsµstr
5
4
3
2
1
0
-0.01
ts
tf
td
tr
IC-
-0.1
Collector Current (Amps)
Switching Speeds
IC/IB=10
-0.0001
-0.001
IC-
Collector Current (Amps)
BE(sat)
-0.8
-0.6
olts)
V
-0.4
(
-
-0.2
V
0
100
)
%
80
(
ain
G
60
ed
is
l
40
ma
or
N
20
-
h
IC/IB=10
-0.0001
-0.001
-0.01 -0.1
IC-
Collector Current (Amps)
CE(sat)
V
0
-0.0001
IC-
Collector Current (Amps)
-0.001
v IC
VCE=-10V
-0.01 -0.1
-1
1
hFEv IC V
IB1=IB2=IC/10
-0.01 -0.1
v IC
tf
ns
1000
800
600
td
ns
100
400
50
200
0
0
-1
-1
Single Pulse Test at Tamb=25°C
DC
1s
100ms
10ms
1ms
100µs
10V 100V
1V
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1000V
0.01
0.001
10
1
0.1
0.1V
-1.4
-1.2
ts)
-1.0
ol
V
(
-
-0.8
V
-0.6
-0.0001
IC-
Collector Current (Amps)
-0.001
BE(on)
V
VCE=-10V
-0.01
v IC
-0.1
-1
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