Zetex Semiconductor FMMT551 Datasheet
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt V
* 1 Amp continuous current
CEO
FMMT551
C
E
COMPLEMENTARY TYPE FMMT451
PARTMARKING DETAIL 551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
obo
*Measured under pulsed conditions. Pulse width=300
-80 V
-60 V IC=-10mA*
-5 V
-0.1
-0.1
µA
µA
-0.35 V IC=-150mA, IB=-15mA*
-1.1 V IC=-150mA, IB=-15mA*
50
150 IC=-150mA, VCE=-10V*
10
150 MHz IC=-50mA, VCE=-10V
25 pF VCB=-10V, f=1MHz
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
-80 V
-60 V
-5 V
-2 A
-1 A
-200 mA
500 mW
-55 to +200 °C
=-100µA
I
C
=-100µA
I
E
V
=-60V
CB
V
=-4V
EB
=-1A, VCE=-10V*
I
C
f=100MHz
B
FMMT551
TYPICAL CHARACTERISTICS
s)
t
ol
s)
t
ol
(V
-
V
(V
-
V
-0.8
-0.6
-0.4
-0.2
100
%)
80
n (
ai
G
60
sed
i
al
IC/IB=10
0
-0.01
-0.1
-10-1
IC- Collector Current (Amps)
CE(sat)
-1.4
-1.2
-1.0
-0.8
-0.6
V
-0.01
Collector Current (Amps)
IC-
V
-0.1
BE(on)
v IC
-1 -10
v IC
40
Norm
-
20
h
-0.001
-0.01
Collector Current (Amps)
IC-
-10-0.1 -1
hFEv IC
-1.0
-0.9
s)
t
ol
(V
-0.8
-
-0.7
V
-0.6
-0.01
Collector Current (Amps)
IC-
BE(sat)
V
v IC
-10-0.1 -1
10
1
DC
1s
100ms
0.1
0.01
0.1V
10ms
100
1ms
µ
s
1V
10V 100V
VCE- Collector Emitter Voltage (V)
Safe Operating Area
3 - 130 3 - 129
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