Zetex Semiconductor FMMT5179 Datasheet
SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* High f
* Max capacitance=1pF
* Low noise 4.5dB
=900MHz Min
T
FMMT5179
C
E
PARTMARKING DETAIL - 179
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Sustaining
Voltage
Collector-Base Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Transition Frequency f
Collector-Base Capacitance C
Small Signal Current Gain h
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
T
cb
fe
Collector Base Time Constant rbC
Noise Figure N
Common-Emitter Amplifier
F
Gpe 15 dB I
12 V IC= 3mA, IB=0
20 V
2.5 V
0.02
1.0
µA
µA
25 250 IC=3mA, VCE=1V
0.4 V IC=10mA, IB=1mA
1.0 V IC=10mA, IB=1mA
900 2000 MHz IC=5mA, VCE=6V, f=100MHz
1pFI
25 300 IC=2mA, VCE=6V, f=1KHz
314psI
c
4.5 dB IC=1.5mA, VCE=6V
Power Gain
Spice parameter data is available upon request for this device
20 V
12 V
2.5 V
50 mA
330 mW
-55 to +150 °C
= 1µA, I
I
C
I
E
V
V
E
E
R
C
f=200MHz
=0
E
=10µA, I
CB
CB
=0
C
=15V, IE=0
=15V, IE=0, T
amb
=0, VCB=10V, f=1MHz
=2mA, VCB=6V, f=31.9MHz
=50Ω, f=200MHz
S
=5mA, VCE=6V
B
=150°C
FMMT5179
TYPICAL CHA R ACTERISTICS
in
a
-G
E
F
h
Hz)
M
(
-
T
f
200
150
100
50
0
1500
1000
500
0
175°C
100°C
25°C
-55°C
0.1 1 10
(mA)
IC -
hFEv IC
IC - (mA)
VCE=1V
VCE=6V
f=100MHz
1.0
VCE=1V
0.8
0.6
olts)
V
(
-
E
0.4
B
V
0.2
100
1000.1 1 10
0
1.2
1.0
0.8
)
F
0.6
(p
-
B
C
0.4
C
0.2
0
0.1 1 10
-55°C
25°C
100°C
175°C
V
(mA)
IC -
BE(on)
v IC
IE=0
f=1MHz
1000.1 1 10
30
VCB - (Volts)
CCBv VCB fTv IC
3 - 170 3 - 169
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