Zetex Semiconductor FMMT497 Datasheet
SOT23 NPN SILICON PLANAR HIGH VOLTAGE
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 DECEMBER 1995 ✪
COMPLIMENTARY TYPE FMMT597
PARTMARKING DETAIL 497
FMMT497
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
= 25°C).
300 V
300 V
5V
500 mA
1A
200 mA
500 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
*Measured under pulsed conditions. Pulse width=300
300 V
=100µA
I
C
300 V IC=10mA*
5V
=100µA
I
E
100 nA VCB=250V
100 nA V
CES
=250V
100 nA VEB=4V
0.2
0.3
V
V
IC=100mA, IB=10mA
=250mA, IB=25mA
I
C
1.0 V IC=250mA, IB=25mA
1.0 V IC=250mA, VCE=10V
100
80
20
300
IC=1mA, VCE=10V
=100mA, VCE=10V*
I
C
I
=250mA, VCE=10V*
C
75 MHz IC=50mA, VCE=10V
f=100MHz
5pFV
µs. Duty cycle ≤ 2%
=10V, f=1MHz
CB
3 - 1253 - 126
FMMT497
TYPICAL CHARACTERISTICS
400
300
200
0.6
0.5
0.4
0.3
0.2
0.1
0
100
0
1mA
1mA
+25 ° C
CE
V
+100 °C
+25 °C
-55 °C
=10V
IC/IB=10
IC/IB=50
IC-Collector Current
VCE(sat) v IC
I
-Collector Current
C
hFE V IC
100mA10mA
100mA10mA 1A
0.6
C/IB
=10
I
0.5
-55 °C
0.4
+25 °C
+100 °C
0.3
0.2
0.1
1A
0
1mA
-Collector Current
I
C
1A10mA 100mA
VCE(sat) v IC
C/IB
=10
I
0.9
0.8
0.6
0.4
-55 °C
+25 °C
+100 °C
0.2
0
1mA
10mA
100mA 1A
IC-Collector Current
VBE(sat) v IC
V
CE
=10V
0.9
1
0.8
0.6
0.4
0.2
0
1mA
-55 °C
+25 °C
+100 °C
100mA10mA
1A
IC-Collector Current
BE(on)
V
v I
C
0.1
DC
1s
0.01
0.001
100ms
10ms
1ms
100
µ
s
0.1 10 100
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1000
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