Zetex Semiconductor FMMT494 Datasheet

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995 ✪

PARTMARKING DETAIL  494

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Peak Pulse Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltages V

Collector Cut-Off Currents I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Collector-Base
Breakdown Voltage

*Measured under pulsed conditions. Pulse width=300

(BR)CBO

V

CEO(sus)

V

(BR)EBO

CBO

I

CES

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

C

obo

CBO

CEO

EBO

C

CM

B

tot

j:Tstg

= 25°C).

amb

140 V

120 V IC=10mA*

5V

100 nA VCB=120V

100 nA VCE=120V

100 nA VEB=4V

0.2

0.3

V
V

1.1 V IC=500mA, IB=50mA*

1.0 V IC=500mA, VCE=10V*

100
100

300
60
20

100 MHz IC=50mA, VCE=10V

10 pF VCB=10V, f=1MHz

µs. Duty cycle ≤ 2%

FMMT494

C

140 V

120 V

5V

1A

2A

200 mA

500 mW

-55 to +150 °C

=100µA

I

C

=100µA

I

E

IC=250mA, IB=25mA*

=500mA, IB=50mA*

I

C

I

=1mA, VCE=10V*

C

I

=250mA, VCE=10V*

C

=500mA, VCE=10V*

I

C

I

=1A, VCE=10V*

C

f=100MHz

E

B

FMMT494

TYPICAL CHARACTERISTICS

280

240

200

160

120

0.4

+25 ° C

0.3

0.2

0.1

0

1mA

10mA

IC/IB=10
IC/IB=50

100mA

10A1A

IC-Collector Current

CE(sat)

V

CE

V

=10V

+100 ° C

+25 ° C

-55 ° C

80

40

0

1mA

C

v I

100mA10mA 10A1A

IC-Collector Current

C

hFEV I

0.4

C/IB

=10

I

0.3

0.2

0.1

0

10mA

-55 °C

+25 ° C

+100 ° C

100mA1mA

10A1A

IC-Collector Current

CE(sat)

V

C/IB

=10

I

1.0

0.8

0.6

0.4

0.2

0

1mA

10mA

C

v I

-55 ° C
+25 ° C

+100 ° C

100mA 1A

10A

IC-Collector Current

BE(sat)

V

v I

C

V

CE

=10V

1.0

0.8

-55 ° C

0.6

+25 ° C

0.4

+100 ° C

0.2

0

1mA

100mA10mA

10A1A

IC-Collector Current

VBE(on) v IC

10

1

0.1

0.01

0.001

DC

1s

100ms

10ms

1ms

100

µ

s

0.1 10 100

1

VCE- Collector Emitter Voltage (V)

Safe Operating Area

1000

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