Zetex Semiconductor FMMT493ATC, FMMT493ATA Datasheet

SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR
FMMT493A
NPN: V
= 60V, IC= 1A, VCE(SAT) = 0.5V @1A
CEO
Description:
This 60V NPN transistor provides users with performance combining low saturation and high h with a continuous current capability of 1A, ensuring improved circuit efficiencies.
Features
Low saturation voltage
High h
I
C
min 300 @ 250mA
= 1A
Applications
· Various driving functions including:-
- Motors
- Actuators
- Soleniod & Relays
·
Backlight Inverters.
·
DC_DC Modules.
C
E
B
SOT23
Device Reel Size Tape Width Quantity
(inches) (mm) Per Reel FMMT493ATA 7 8mm embossed 3000 units FMMT493ATC 13 8mm embossed 10000 units
ISSUE 1 - OCTOBER 2001
1
E
C
B
TOP VIEW
FMMT493A
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base Emitter Turn On Voltage
Static Forward Current Transfer Ratio
Transition Frequency f
Collector - Base Breakdown Voltage
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
CBO
CES
EBO
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
T
C
OBO
120 V IC= 100␮A
60 V IC= 10mA*
5VI
= 100␮A
E
100 nA VCB= 45V
100 nA V
CES
= 45V
100 nA VEB=4V
0.25
0.5
V V
IC= 500mA, IB= 50mA
= 1A, IB= 100mA
I
C
1.15 V IC=1A, IB= 100mA
1.0 V IC= 1A, VCE- 10V
300 500 300 100 20
1200
=1mA,VCE= 10V
I
C
= 150mA, VCE= 10V
I
C
= 250mA, VCE= 10V
I
C
= 500mA, VCE= 10V
I
C
= 1A, VCE= 10V
I
C
150 Mhz IC= 50mA, VCE= 10V
f = 100MHz
10 pF VCB=10V,f=1MHz
*Measured under pulsed conditions. Pulse width = 300s. Duty Cycle <2%
2
ISSUE 1 - OCTOBER 2001
(V)
100m
CE(SAT)
V
1
0m
Tamb=25°C
IC/IB=100
IC/IB=50
ELECTRICAL CHARACTERICS
0.40
IC/IB=50
0.35
0.30
(V)
0.25
0.20
V
0.15
CE(SAT)
IC/IB=10
0.10
0.05
FMMT493A
100°C
25°C
-55°C
1m 10m 100m 1
ICCollector Current (A)
V
CE(SAT)vIC
1.2
1.0
0.8
0.6
0.4
Normalised Gain
0.2
0.0
100°C
25°C
-55°C
1m 10m 100m 1
VCE=10V
ICCollector Current (A)
hFEvI
C
1.0
VCE=10V
0.8
(V)
BE(ON)
V
0.6
0.4
-55°C
25°C
100°C
1400
1200
1000
800
600
400
200
0
1m 10m 100m 1
ICCollector Current (A)
V
CE(SAT)vIC
IC/IB=50
1.0
)
FE
(V)
)
(
V
Typical Gain (h
-55°C
0.8
SAT
0.6
BE
0.4
0.2 1m 10m 100m 1
25°C
100°C
ICCollector Current (A)
V
BE(SAT)vIC
0.2 1m 10m 100m 1
ICCollector Current (A)
ISSUE 1 - OCTOBER 2001
V
BE(ON)vIC
3
FMMT493A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
120 V
60 V
5V
1A
2A
200 mA
500 mW
-55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
JA
Mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire.
4
250 C/W
ISSUE 1 - OCTOBER 2001
THERMAL CHARACTERISTICS
0.6
FMMT493A
1
DC
100m
Collector Current (A)
C
I
10m
1s
100ms
10ms
1ms
100µs
Single Pulse T
100m 1 10 100
amb
=25°C
VCECollector-Emitter Voltage (V)
Safe Operating Area
250
200
D=0.5
150
100
D=0.2
50
0
Thermal Resistance (°C/W)
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
0.5
0.4
0.3
0.2
0.1
0.0
Max Power Dissipation (W)
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
ISSUE 1 - OCTOBER 2001
5
FMMT493A
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
N
DIM Millimetres Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N
NOM 0.95 NOM 0.037
© Zetex plc 2001
Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420
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ISSUE 1 - OCTOBER 2001
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