Zetex Semiconductor FMMT493 Datasheet
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
COMPLEMENTARY TYPE FMMT593
PARTMARKING DETAIL 493
FMMT493
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
= 25°C).
120 V
100 V
5V
1A
2A
200 mA
500 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Saturation Voltages V
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
CES
EBO
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
*Measured under pulsed conditions. Pulse width=300
120 V
=100µA
I
C
100 V IC=10mA*
5V
=100µA
I
E
100 nA VCB=100V
100 nA V
CES
=100V
100 nA VEB=4V
0.3
0.6
V
V
IC=500mA, IB=50mA
I
=1A, IB=100mA
C
1.15 V IC=1A, IB=100mA
1.0 V IC=1A, VCE=10V
100
100
60
20
300
I
=1mA, VCE=10V*
C
I
=250mA, VCE=10V*
C
=500mA, VCE=10V*
I
C
=1A, VCE=10V*
I
C
150 MHz IC=50mA, VCE=10V
f=100MHz
10 pF VCB=10V, f=1MHz
µs. Duty cycle ≤ 2%
FMMT493
TYPICAL CHARACTERISTICS
-(V)
)
t
a
s
(
E
C
V
- Typical Gain
E
F
h
- (V)
)
n
o
(
E
B
V
280
240
0.4
0.3
0.2
0.1
0
200
160
120
1.0
0.8
0.6
0.4
0.2
0
0.4
C/IB
I
+25 ° C
IC/IB=10
1mA
IC/IB=50
100mA10m A
10A1A
-(V)
)
t
a
s
(
E
C
V
IC-Collector Current
CE(sat)
V
CE
=10V
V
+100 ° C
+25 ° C
-55 ° C
80
40
0
1mA
C
I
-Collector Current
hFEV I
CE
=10V
V
-55 ° C
+25 °C
+100 °C
1mA
C
v I
100mA10mA 10A1A
C
100mA10mA
- (V)
)
t
a
s
(
E
B
V
-Collector Current (A)
C
I
10A1A
IC-Collector Current
BE(on)
V
v I
C
=10
0.3
0.2
0.1
0
1mA
C/IB
I
=10
1.0
0.8
0.6
0.4
0.2
0
1mA
-55 ° C
+25 ° C
+100 ° C
C
I
-Collector Current
CE(sat)
V
10mA
IC-Collector Current
BE(sat)
V
10
1
0.1
0.01
0.001
DC
1s
100ms
10ms
1ms
100µs
0.1 10
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10A1A10mA 100mA
C
v I
-55 ° C
+25 ° C
+100 ° C
100mA 1A 10 A
C
v I
100
3 - 120 3 - 119
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