Zetex Semiconductor FMMT491 Datasheet

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3 - OCTOBER 1995 ✪

FEATURES
* Low equivalent on-resistance; R

210mΩ at 1A

CE(sat)

FMMT491

C

E

COMPLEMENTARY TYPE - FMMT591
PARTMARKING DETAIL - 491

ABSOLUTE MAXIMUM RATINGS.

SOT23

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Peak Pulse Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

CBO

CEO

EBO

C

CM

tot

j:Tstg

= 25°C).

80 V

60 V

5V

1A

2A

500 mW

-55 to +150 °C

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Collector-Base
Breakdown Voltage

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

CBO

CES

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

C

obo

*Measured under pulsed conditions. Pulse width=300

80 V

=100µA

I

C

60 V IC=10mA*

5V

=100µA

I

E

100 nA VCB=60V

100 nA V

CES

=60V

100 nA VEB=4V

0.25

0.50

V
V

IC=500mA, IB=50mA*

=1A, IB=100mA*

I

C

1.1 V IC=1A, IB=100mA*

1.0 V IC=1A, VCE=5V*

100
100
80
30

300

I

=1mA, VCE=5V

C

=500mA, VCE=5V*

I

C

I

=1A, VCE=5V*

C

=2A, VCE=5V*

I

C

150 MHz IC=50mA, VCE=10V

f=100MHz

10 pF VCB=10V, f=1MHz

µs. Duty cycle ≤ 2%

3 - 115

B

FMMT491

TYPICAL CHARACTERISTICS

400

300

200

0.4

0.3

0.2

0.1

0

100

0.6

+25°C

0.5

0.6

C/IB

=10

I

0.5

0.4

0.3

IC/IB=10
IC/IB=50

-55 °C

+25 °C

+100 °C

0.2

0.1

1mA

V

CE

=5V

100mA10mA

IC-Collector Current

CE(sat)

V

v I

C

10A1A

0

1mA

10A1A10mA 100mA

IC-Collector Current

CE(sat)

V

v IC

C/IB

=10

I

1.0

+100 °C

+25 °C

-55 °C

0.8

0.6

0.4

-55 °C

+25 °C

+100 °C

0.2

0

1mA

100mA10mA

-Collector Current

I

C

hFE V IC

1A

10A

0

1mA

10mA

100mA 1A 10A

IC-Collector Current

VBE(sat) v I

C

1.2

CE

V

=5V

10

1.0

0.8

0.6

-55 °C

0.4

+25 °C

+100 °C

0.2

0

1mA

100mA10mA

1A

10A

IC-Collector Current

BE(on)

V

v I

C

1

DC

1s

100ms

0.1

10ms

1ms

100us

0.01

0.1V 10V 100V

1V

VCE- Collector Emitter Voltage (V)

Safe Operating Area

3 - 116