Zetex Semiconductor FMMT489 Datasheet

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE3 - OCTOBER 1995 ✪

FEATURES
* Very low equivalent on-resistance; R

COMPLEMENTARY TYPE  FMMT589
PARTMARKING DETAIL  489

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Peak Pulse Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltages V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Collector-Base
Breakdown Voltage

*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMT449 datasheet

(BR)CBO

V

CEO(sus)

V

(BR)EBO

CBO

I

CES

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

C

obo

175mΩ at 1A

CE(sat)

CBO

CEO

EBO

C

CM

B

tot

j:Tstg

= 25°C).

amb

50 V

30 V IC=10mA*

5V

100 nA VCB=30V

100 nA V

100 nA VEB=4V

0.3

0.6

V
V

1.1 V IC=1A, IB=100mA*

1.0 V IC=1A, VCE=2V*

100
100

300
60
20

150 MHz IC=50mA, VCE=10V

10 pF VCB=10V, f=1MHz

µs. Duty cycle ≤ 2%

FMMT489

C

50 V

30 V

5V

1A

4A

200 mA

500 mW

-55 to +150 °C

=100µA

I

C

=100µA

I

E

=30V

CES

IC=1A, IB=100mA*
I

=2A, IB=200mA*

C

I

=1mA, VCE=2V*

C

I

=1A, VCE=2V*

C

=2A, VCE=2V*

I

C

I

=4A, VCE=2V*

C

f=100MHz

E

B

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