Zetex Semiconductor FMMT459TC, FMMT459TA Datasheet

FMMT459

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

SUMMARY
V

=450V; VCE(sat) = 100mV; IC= 150mA

CEO

DESCRIPTION

This new high voltage tranistor provides users with very effiecient
performance combining low V
losses at 450V operation, making it ideal for use in high efficiency Telecom
and protected line switching applications.

FEATURES

Low Saturation Voltage - 90mV @ 50mA

•

Hfe Min 50 @ 30 mA

•

=150mA Continuous

I

•

C

• SOT23 package with Ptot 625mW

• Specification can be supplied in larger package outlines

APPLICATIONS

• Electronic test equipment

• Off line switching circuits

• Piezo Actuators.

•

RCD circuits.

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

(sat) and Hfe to give extremely low on state

CE

TAPE WIDTH
(mm)

QUANTITY
PER REEL

SOT23

C

Top View

E

B

FMMT459TA 7 8mm embossed 3000 units

FMMT459TC

DEVICE MARKING

459

ISSUE 2 - DECEMBER 2001

13 8mm embossed 10000 units

1

FMMT459

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CM

C

B

P

P

CBO

CEO

EBO

D

D

j:Tstg

500 V

450 V

5V

500 mA

150 mA

200 mA

625

5

806

6.4

mW

mW/°C

mW

mW/°C

-55 to +150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

2

200 °C/W

155 °C/W

ISSUE 2 - DECEMBER 2001