Zetex Semiconductor FMMT458 Datasheet
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* 400 Volt V
COMPLEMENTARY TYPE FMMT558
PARTMARKING DETAIL 458
CEO
FMMT458
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
= 25°C).
400 V
400 V
5V
225 mA
1A
200 mA
500 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
400 V
=100µA
I
C
400 V IC=10mA*
5V
=100µA
I
E
100 nA VCB=320V
100 nA VCE=320V
100 nA VEB=4V
0.2
0.5
V
V
IC=20mA, IB=2mA*
=50mA, IB=6mA*
I
C
0.9 V IC=50mA, IB=5mA*
0.9 V IC=50mA, VCE=10V*
100
100
15
300
IC=1mA, VCE=10V
I
=50mA, VCE=10V*
C
=100mA, VCE=10V*
I
C
50 MHz IC=10mA, VCE=20V
f=20MHz
5pFV
135 Typical
2260 Typicalnsns
µs. Duty cycle ≤ 2%
=20V, f=1MHz
CB
IC=50mA, VCC=100V
I
=5mA, IB2=-10mA
B1
TYPICAL CHARACTERISTICS
FMMT458
olts)
(V
-
V
ain
sed G
i
al
Norm
-
h
olts)
(V
-
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1 20110
Collector Current (Amps)
IC-
v IC
T
=25°C
amb
VCE=10V
300
200
100
1.6
1.4
1.2
olts)
V
1.0
- (
0.8
0.6
V
0.4
0.2
0
0.001
1.6
1.4
1.2
olts)
1.0
(V
-
0.8
0.6
V
0.4
0.2
0
0.001
hFEv IC V
1.0
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
VCE=10V
ps)
Current (Am
lector
Col
I
0.1
0.01
0.001
VBE(on) v IC
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
CE(sat)
V
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
Single Pulse T estat T
D.C.
1s
100ms
10ms
1.0ms
0.1ms
Collector Voltage (Volts)
VCE-
-55°C
BE(sat)
v IC
v IC
IC/IB=10
IC/IB=10
=25°C
amb
100110
Safe Operating Area
1000
3 - 113 3 - 112
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