Zetex Semiconductor FMMT417, FMMT415 Datasheet

SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR

FMMT415
FMMT417

ISSUE 4 - OCTOBER 1995 ✪

FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
APPLICATIONS

C

* Laser LED drivers
* Fast edge generation

B

* High speed pulse generators
PARTMARKING DETAIL  FMMT415  415

FMMT417  417

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL FMMT415 FMMT417 UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Peak Collector Current (Pulse Width=20ns) I

Power Dissipation P

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

CBO

CEO

EBO

C

CM

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter
Saturation Voltage

Current in Second Breakdown
(Pulsed)

Static Forward Current Transfer
Ratio

Transition Frequency f

Collector-Base Capacitance C

FMMT415 V

(BR)CES

FMMT417 320 V I

V

CEO(sus)

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

I

SB

h

FE

T

cb

*Measured under pulsed conditions. Pulse width=300

260 V IC=1mA

100 V

6V

15
25

25 IC=10mA, VCE=10V*

40 MHz IC=10mA, VCE=20V

µs. Duty cycle ≤ 2%

3 - 1043 - 105

260 320 V

100 100 V

6V

500 mA

60 A

330 mW

-55 to +150 °C

= -55 to +150°C

T

amb

=1mA

C

I

=100µA

C

=10µA

I

E

0.1
10

0.1

µA
µA

µA

V
V
T

V

=180V

CB

=180V,

CB
amb

=4V

EB

=100°C

0.5 V IC=10mA, IB=1mA*

0.9 V IC=10mA, IB=1mA*

A

VC=200V, CCE=620pF

A

V

=250V, CCE=620pF

C

f=20MHz

8pFVCB=20V, IE=0

f=100MHz

E

TYPICAL CHARACTERISTICS

FMMT415
FMMT417

180

160

140

)

120

A
(

-

100

80

I

60

40

20

0

04020 80 100 120 140 160 18060

11

1. >4x10 Operations Without Fai lure

7

2. 10 Operations To Failure

3

3. 10 Operations To Failure

2.

1.

Pulse Width (ns)

Maximum Avalanche Current

v Pulse Width

100

80

60

h

40

20

0

100µA

175°C

25°C

-55°C

1mA 10mA 100mA 1A

Collector Current

hFEv IC

40

30

)
A

(

3.

-

20

I

10

0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

VC= 250V

VC= 200V

Temperature (°C)

USB

I

v Temperature

for the specified conditions

220

VCE=10V

200

)

180

V
(

-

160

V

140

120

100

100p 1n 10n 100n

Risetime of Base
Drive Current = 5mA/ns

IB=50mA

IB=100mA

IB=200mA

Collector-Emitter Capacitance (F)

Minimum starting voltage

as a function of capacitance

180

175

170

165

(V)

-

160

155

V

150

145

110

C=620pF

IB=60mA

IB=100mA

IB=200mA

160

150

(V)

-

140

V

120

100

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Risetime of Base Drive (mA/ns)

Minimum starting voltage

as a function of drive current

C = 620pF

Temperature (°C)

Minimum starting voltage

as a function of temperature