Zetex Semiconductor FMMT413 Datasheet
SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Collector Current (25ns Pulse Width) I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
Static Forward Current
Transfer Ratio
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
I
USB
h
FE
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
150 V
50 V IC=10mA
6V
22
31
50 IC=10mA, VCE=10V
CBO
CEO
EBO
C
CM
tot
j:Tstg
= 25°C unless otherwise stated).
amb
0.1
0.1
µA
µA
0.15 V IC=10mA, IB=1mA
0.8 V IC=10mA, IB=1mA
A
A
FMMT413
C
SOT23
150 V
50 V
6V
100 mA
50 A
330 mW
-55 to +150 °C
=100µA
I
C
I
=100µA
E
V
=120V
CB
V
=4V
EB
VC=110V, CCE=4.7nF*
V
=130V, CCE=4.7nF*
C
monitor
(USB)
E
B
3 - 1023 - 103
FMMT413
0
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Emitter Inductance L
Transition Frequency f
Collector-Base
Capacitance
.
e
T
C
cb
TYPICAL CHARACTERISTICS
2.5 nH Standard SOT23 leads
150 MHz IC=10mA, VCE=5V
f=20MHz
2pFV
=10V, IE=0
CB
f=1MHz
)
ent (A
urr
anche C
val
A
-
I(
50
40
30
20
10
0
T
amb
=25°C
B
I
=5mA/ns
p.r.f.=10KHz
050
Supply Voltage (V)
VS-
CCE=2x4.7nF
CCE=4.7nF
CCE=2.2nF
CCE=1.0nF
100 150 200 25
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