Zetex Semiconductor FLLD263 Datasheet

SOT23 SILICON PLANAR LOW LEAKAGE
COMMON ANODE DIODE PAIR

ISSUE 2  JANUARY 1996 ✪

DIODE PIN CONNECTION

1

FLLD263

1

3

2

23

SOT23

PART MARKING DETAIL  D63

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Repetitive Peak Reverse Voltage V

Average Rectified Forward Current I

Non-Repetitive Peak Forward Current (t=1

Power Dissipation at T

= 25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

RRM

F(AV)

I

µs)

FSM

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Reverse Current I

Reverse Recovery Time* t

Forward Recovery Time t

Diode Capacitance C

Forward Overshoot Voltage V

R

rr

fr

d

fr

5
5

400 ns IF= IR=50  400mA

10 ns IF=10mA

4pFV

Typ

0.9 V

nA

µA

100 V

250 mA

3.0 A

330 mW

-55 to +150 °C

=100V

V

RRM

V

=100V, T

RRM

=1V, f=1MHz

R

amb

=150°C

IF=10mA,
Rise time=5ns

±20%

Forward Voltage V

*Time for I

to recover to 10% of IR peak

R

F

1.4 V IF=-200mA

3 - 983 - 99

FLLD258
FLLD261
FLLD263

TYPICAL CHARACTERISTICS

25

20

15

10

5

0

0100

VF- Forward Voltage (V)

IRv V

80604020

F