Zetex Semiconductor FLLD261 Datasheet
SOT23 SILICON PLANAR LOW LEAKAGE
SERIES DIODE PAIR
ISSUE 2 SEPTEMBER 1995 ✪
DIODE PIN CONNECTION
FLLD261
1
3
1
2
SOT23
PART MARKING DETAIL P8A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Repetitive Peak Reverse Voltage V
Average Rectified Forward Current I
Non-Repetitive Peak Forward Current (t=1
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
RRM
F(AV)
I
µs)
FSM
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Reverse Current I
Reverse Recovery Time* t
Forward Recovery Time t
Diode Capacitance C
Forward Overshoot Voltage V
R
rr
fr
d
fr
5
5
nA
µA
400 ns IF= IR=50 400mA
10 ns IF=10mA
4pFV
Typ
0.9 V
100 V
250 mA
3.0 A
330 mW
-55 to +150 °C
V
=100V
RRM
=100V, T
V
RRM
=1V, f=1MHz
R
amb
=150°C
IF=10mA,
Rise time=5ns
±20%
2
3
Forward Voltage V
*Time for I
For typical characteristics graphs see FLLD263 datasheet.
to recover to 10% of IR peak
R
F
3 - 97
1.4 V IF=-200mA
FLLD258
FLLD261
FLLD263
TYPICAL CHARACTERISTICS
25
20
15
10
5
0
0100
VF- Forward Voltage (V)
IRv V
80604020
F
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