Zetex Semiconductor FCX789A Datasheet
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 -NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 8A Peak Pulse Current
* Excellent H
* Low Saturation Voltage E.g. 10mv Typ.
Complimentary Type - FCX688B
Partmarking Detail - 789
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
Characteristics up to 10 Amps
FE
CBO
CEO
EBO
CM
C
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX789A
C
C
B
-25 V
-25 V
-5 V
-8 A
-3 A
1 †
2 ‡
-55 to +150 °C
W
W
E
FCX789A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
-25 V
=-100µA
I
C
-25 V IC=-10mA*
-5 V
-0.1
-0.1
-190
-400
-320
µA
µA
mV
mV
mV
I
=-100µA
E
VCB=-15V
VEB=-4V
IC=-1A, IB=-10mA*
I
=-2A, IB=-20mA*
C
I
=-3A, IB=-100mA*
C
-0.9 V IC=-1A, IB=-10mA*
-0.8 V IC=-1A, VCE=-2V*
300
230
180
75
800 IC=-10mA, VCE=-2V
I
=-1A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-6A, VCE=-2V*
C
100 MHz IC=-50mA, VCE=-5V
f=50MHz
225 pF VEB=-0.5V, f=1MHz
25 pF VCB=-10V, f=1MHz
35
400
ns
IC=-500mA, IB1=-50mA
ns
I
=-50mA, VCC=-10V
B2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
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