Zetex Semiconductor FCX596 Datasheet
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
PARTMARKING DETAIL P96
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
FCX596
D
D
G
SOT89
-220 V
-200 V
-5 V
-1 A
-0.3 A
-200 mA
1W
-65 to +150 °C
S
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Saturation
Voltages
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer Ratio h
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
CES
V
CE(sat)
V
BE(sat)
BE(on)
FE
-220 V
-200 V IC=-10mA*
-5 V
100
100
85
35
Transition Frequency f
Output Capacitance C
T
obo
*Measured under pulsed conditions. Pulse width=300
150 MHz IC=-50mA, VCE=-10V
µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT596 datasheet.
3 - 95
=-100µA
I
C
=-100µA
I
E
-100 nA VCB=-200V
-100 nA VEB=-4V
-100 nA V
-0.2
-0.35VV
=-200V
CES
IC=-100mA,IB=-10mA
I
=-250mA IB=-25mA*
C
-1.0 V IC=-250mA,IB=-25mA*
-0.9 V IC=-250mA,VCE=-10V*
I
=-1mA, VCE=-10V
C
=-100mA,VCE=-10V*
I
C
300
I
=-250mA,VCE=-10V*
C
=-400mA,VCE=-10V,
I
C
f=100MHz
10 pF VCB=-10V, f=1MHz
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