Zetex Semiconductor FCX593 Datasheet

SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR

ISSUE 3 - NOVEMBER 1995 ✪

COMPLIMENTARY TO FMMT493
PARTMARKING DETAIL - P93

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.

amb

CBO

CEO

EBO

CM

C

B

tot

j:Tstg

= 25°C).

FCX593

C

C

B

-120 V

-100 V

-5 V

-2 A

-1 A

-200 mA

1W

-65 to +150 °C

E

Breakdown Voltages V

Cut-Off Currents I

Saturation Voltages V

Base-Emitter Turn-on Voltage V

Static Forward Current Transfer Ratio h

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

EBO

I

CES

CE(sat)

V

BE(sat)

BE(on)

FE

-120 V

-100 V IC=-10mA*

-5 V

100
100
10050300

Transition Frequency f

Output Capacitance C

T

obo

*Measured under pulsed conditions. Pulse width=300

50 MHz IC=-50mA, VCE=-10V

µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT593 datasheet

3 - 94

=-100µA

I

C

=-100µA

I

E

-100 nA VCB=-100V

-100 nA VEB=-4V

-100 nA V

-0.2

-0.3VV

=-100V

CES

IC=-250mA,IB=-25mA*

=-500mA IB=-50mA*

I

C

-1.1 V IC=-500mA,IB=-50mA*

-1.0 V IC=-1mA, VCE=-5V*

I

=-1mA, VCE=-5V

C

I

=-250mA,VCE=-5V*

C

I

=-500mA, VCE=-5V*

C

=-1A, VCE=-5V*

I

C

f=100MHz

5pFVCB=-10V, f=1MHz